Fairchild Semiconductor IRFW510A Datasheet
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower R
DS(ON)
: 0.289 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
D2-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I2-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 )
Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
A
V
DSS
V
*
µ
Ω
O
1
O
2
O
3
Ο
C
Ο
C
O
1
O
1
Ο
C
θ
Ο
C
θ
θ
Ο
C
Ο
C
Ο
C/
Ο
C
IRFW/I510A
BV
DSS
= 100 V
R
DS(on)
= 0.4
I
D
= 5.6 A
100
5.6
4
20
63
5.6
3.3
6.5
3.8
33
0.22
- 55 to +175
300
4.51
40
62.5
--
--
--
Ω
20
+
_
©1999 Fairchi ld Semiconduc tor Corpor ation
Rev. B
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
CharacteristicSymbol
Max. UnitsTyp.Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/ T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,ID=250 A
I
D
=250 A See Fig 7
V
DS
=5V,ID=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,TC=150
V
GS
=10V,ID=2.8A
V
DS
=40V,ID=2.8A
V
DD
=50V,ID=5.6A,
R
G
=24
See Fig 13
V
DS
=80V,VGS=10V,
I
D
=5.6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
--
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J
=25 ,IS=5.6A,VGS=0V
T
J
=25 ,IF=5.6A
di
F
/dt=100A/ s
∆ ∆
Ο
C
Ω
Ω
µ
O
4
O
5
Ο
C
µ
µ
Ο
C
O
4
O
4
O
4
O
4
O
1
Ω
Ο
C
µ
µ
Ο
C
µ
O
5
O
4
IRFW/I510A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
55
21
10
14
28
18
8.5
1.6
4.1
--
--
4.0
100
-100
10
100
0.4
--
240
65
25
30
40
70
50
12
--
--
3.49
190
--
--
--
85
0.23
5.6
20
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=3mH, I
AS
=5.6A, VDD=25V, RG=27 , Starting TJ =25
I
SD
5.6A, di/dt 250A/ s, VDD BV
DSS
, Starting TJ =25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
Ω
o
C
o
C
µ
µ
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
IRFW/I510A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
, Drain Current [A]
VDS , Drain-Source Voltage [V]
2 4 6 8 10
10
-1
10
0
10
1
25 oC
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250
µ
s Pulse Test
I
D
, Drain Current [A]
VGS , Gate-Source Voltage [V]
0 5 10 15 20
0.0
0.2
0.4
0.6
0.8
@ Note : TJ = 25 oC
VGS = 20 V
VGS = 10 V
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
ID , Drain Current [A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-1
10
0
10
1
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250
µ
s Pulse Test
I
DR
, Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
10
0
10
1
0
70
140
210
280
350
C
iss
= Cgs+ Cgd ( Cds= shorted )
C
oss
= Cds+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS , Drain-Source Voltage [V]
0 2 4 6 8 10
0
5
10
VDS = 80 V
V
DS
= 50 V
V
DS
= 20 V
@ Notes : ID = 5.6 A
V
GS
, Gate-Source Voltage [V]
QG , Total Gate Charge [nC]
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