Fairchild Semiconductor IRFS750A Datasheet
Advanced Power MOSFET
IRFS750A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 400V
Low R
: 0.254 (Typ.)
DS(ON)
Ω
µ
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Ο
Continuous Drain Current (T
Continuous Drain Current (T
=25 )
C
=100 )
C
C
Ο
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Ο
C
Total Power Dissipation (T
=25 )
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
T
V
DSS
I
D
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
GS
AS
AR
D
STG
L
O
O
O
O
O
BV
R
I
= 400 V
DSS
DS(on)
= 8.4 A
D
= 0.3
Ω
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
400
8.4
5.3
1
2
1
1
3
60
+
_
30
1210
8.4
4.9
4.0
49
0.39
- 55 to +150
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
Ο
C
Thermal Resistance
Symbol Typ.
R
JC
θ
R
JA
θ
©1999 Fairchi ld Semiconduc tor Corpor ation
Characteristic Max.
Junction-to-Case
Junction-to-Ambient
Units
--
--
2.55
62.5
Ο
/W
C
Rev. B
IRFS750A
Electrical Characteristics (T
Ο
=25 unless otherwise specified)
C
C
N-CHANNEL
POWER MOSFET
BV
∆ ∆
BV/ T
V
GS(th)
I
I
R
DS(on)
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
GSS
DSS
g
iss
oss
rss
t
t
Q
CharacteristicSymbol
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
r
Turn-Off Delay Time
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(“Miller”) Charge
gd
400
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max. UnitsTyp.Min. Test Condition
V
--
0.46
--
--
--
--
--
--
8.6
2140
305
134
20
22
100
32
101
14
51.5
--
--
4.0
100
-100
10
100
0.3
--
2780
350
155
50
55
210
75
131
--
--
V
V/
V
nA
µ
A
Ω
Ω
pF
ns
nC
Ο
C
=0V,ID=250 A
GS
I
=250 A See Fig 7
D
V
=5V,ID=250 A
DS
V
=30V
GS
V
=-30V
GS
V
=400V
DS
V
=320V,TC=125
DS
=10V,ID=4.2A
V
GS
=50V,ID=4.2A
V
DS
=0V,VDS=25V,f =1MHz
V
GS
See Fig 5
V
=200V,ID=17A,
DD
=6.2
R
G
See Fig 13
V
=320V,VGS=10V,
DS
I
=17A
D
See Fig 6 & Fig 12
µ
µ
µ
Ο
C
4
O
4
O
Ω
4
5
O
O
4
5
O
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
1
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O
2
L=30mH, I
O
3
I
O
SD
4
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
O
5
Essentially Independent of Operating Temperature
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=8.4A, VDD=50V, RG=27 , Starting TJ =25
AS
_
17A, di/dt 250A/ s, VDD BV
<
_
<
_
µ
<
µ
O
O
Ω
, Starting TJ =25
DSS
<
--
1
4
--
--
--
-385
--
4.85
--
Ο
C
Ο
C
60
1.5
--
--
µ
C
A
V
ns
8.4
--
_
Integral reverse pn-diode
in the MOSFET
Ο
C
T
=25 ,IS=8.4A,VGS=0V
J
Ο
C
T
=25 ,IF=17A
J
/dt=100A/ s
di
F
µ
O
4
N-CHANNEL
Ω
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
1
6.0 V
10
5.5 V
5.0 V
Bottom : 4.5 V
IRFS750A
1
10
o
150
C
0
10
, Drain Current [A]
D
I
-1
10
-1
10
10
@ Notes :
1. 250
2. T
0
s Pulse Test
µ
= 25 oC
C
VDS , Drain-Source Voltage [V]
0.60
0.45
VGS = 10 V
]
, [
0.30
DS(on)
R
VGS = 20 V
0.15
Drain-Source On-Resistance
0.00
0 10 20 30 40 50 60 70
ID , Drain Current [A]
4000
3000
C
iss
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
1
10
@ Note : TJ = 25 oC
0
10
o
25
, Drain Current [A]
D
I
C
o
- 55
C
-1
10
2 4 6 8 10
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 50 V
DS
s Pulse Test
µ
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
@ Notes :
1. V
= 0 V
, Reverse Drain Current [A]
DR
I
10
150 oC
-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
o
25
C
, Source-Drain Voltage [V]
V
SD
2. 250
GS
s Pulse Test
µ
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
V
= 80 V
10
= 200 V
V
DS
VDS = 320 V
DS
2000
5
, Gate-Source Voltage [V]
GS
V
0
0 20 40 60 80 100 120
@ Notes : ID = 17.0 A
QG , Total Gate Charge [nC]
Capacitance [pF]
1000
C
oss
C
rss
0
0
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
1
10
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