Fairchild Semiconductor IRFS510A Datasheet

Advanced Power MOSFET

IRFS510A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

175 Operating Temperature

C

Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.289 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= 100 V

DSS

DS(on)

= 4.5 A

D

= 0.4

Ω

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

100

4.5

3.2

1

2

1 1

3

20

+

_

20

54

4.5

2.1

6.5 21

0.14

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

Symbol Typ.

R

JC

θ

R

JA

θ

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

6.98

62.5

Ο

C

/W

Rev. B

IRFS510A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

CharacteristicSymbol

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

100

10

100

0.4

--

240

65 25 30 40 70 50 12

--

V

GS

Ο

I

=250 A See Fig 7

V/

C

D

V

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=2.25A

V

GS

=40V,ID=2.25A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=5.6A,

DD

=24

R

G

V

=80V,VGS=10V,

DS

I

=5.6A

D

µ

V

nA

A

Ω

pF

ns

nC

See Fig 6 & Fig 12

Ω

See Fig 13

--

0.11

--

3.29 190

55 21 10 14 28 18

8.5

1.6

4.1

-100

µ

Ο

C

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=4mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=5.6A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

5.6A, di/dt 250A/ s, VDD BV

_

<

_

<

µ

Ω

, Starting TJ =25

DSS

O O

_

<

--

4.5

1

--

20

4

--

1.5

--

85

--

0.23

o

C

o

C

--

Integral reverse pn-diode

A

in the MOSFET

Ο

C

T

=25 ,IS=4.5A,VGS=0V

J

Ο

C

T

=25 ,IF=5.6A

J

/dt=100A/ s

di

F

µ

C

V

ns

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V

1

10

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

VDS , Drain-Source Voltage [V]

0

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25

C

IRFS510A

1

10

o

C

175

0

10

25 oC

, Drain Current [A]

D

I

o

C

1

10

-1

10

2 4 6 8 10

- 55

o

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

GS

2. V

DS

3. 250

= 0 V = 40 V

s Pulse Test

µ

0.8

]

Ω

, [

DS(on)

R

0.6

0.4

VGS = 10 V

0.2

Drain-Source On-Resistance

0.0 0 5 10 15 20

ID , Drain Current [A]

350

280

C

iss

210

C

oss

140

Capacitance [pF]

C

rss

70

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

C

= C

rss

gd

1

10

VDS , Drain-Source Voltage [V]

VGS = 20 V

@ Note : TJ = 25 oC

gd

@ Notes :

1. V

2. f = 1 MHz

GS

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

175 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

25 oC

@ Notes :

1. VGS = 0 V

2. 250

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= 20 V

V

10

V

DS

= 50 V

VDS = 80 V

5

, Gate-Source Voltage [V]

GS

V

0

0 2 4 6 8 10

@ Notes : ID = 5.6 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor IRFS510A Datasheet

Specifications and Main Features

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