Fairchild Semiconductor IRFP140A Datasheet

Advanced Power MOSFET

IRFP140A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

175 Operating Temperature

C

Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.041 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= 100 V

DSS

DS(on)

= 31 A

D

= 0.052

Ω

TO-3P

1

2

3

1.Gate 2. Drain 3. Source

100

31

21.9

1

2

1 1

3

120

+

_

513

13.1

20

31

6.5

131

0.88

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

R

θ

JC

R

θ

CS

R

θ

JA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.24

--

1.14

--

40

Ο

C

/W

Rev. B

IRFP140A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250 A

V

--

4.0

10

--

380 170

50

50 180 120

78

--

V

GS

Ο

I

V/

nA

µ

=250 A See Fig 7

C

D

V

A

Ω

pF

ns

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=15.5A

V

GS

=40V,ID=15.5A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=28A,

DD

=9.1

R

G

See Fig 13

V

=80V,VGS=10V,

DS

nC

I

=28A

D

See Fig 6 & Fig 12

--

0.11

--

23.13 1320

325 148

18 18 90 56 60

10.8

27.9

100

-100

100

0.052

1710

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

O

2

L=0.8mH, I

O

3

I

O

SD

4

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=31A, VDD=25V, RG=27 , Starting TJ =25

AS

_

28A, di/dt 400A/ s, VDD BV

<

_

<

µ

--

31

1.5

--

ns

µ

A V

C

1

--

132

0.63

Ο

C

120

--

O

4

--

O

--

Ω

_

<

µ

, Starting TJ =25

DSS

_

<

Ο

C

Integral reverse pn-diode in the MOSFET

Ο

C

T

=25 ,IS=31A,VGS=0V

J

Ο

C

T

=25 ,IF=28A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

IRFP140A

2

10

V

GS

Top : 1 5 V 1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

1

10

, Drain Current [A]

D

I

0

10

-1

10

@ Notes :

1. 250

s Pulse Test

µ

2. T

= 25 oC

C

0

10

VDS , Drain-Source Voltage [V]

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

0.08

= 10 V

]

Ω

, [

DS(on)

R

0.06

0.04

V

GS

VGS = 20 V

0.02

Drain-Source On-Resistance

0.00 0 30 60 90 120

ID , Drain Current [A]

1

10

@ Note : TJ = 25 oC

2

10

o

175

C

1

10

o

25

C

, Drain Current [A]

D

I

0

10

2 4 6 8 10

- 55

o

C

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

175 oC

, Reverse Drain Current [A]

DR

I

0

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

o

C

25

@ Notes :

1. V

= 0 V

GS

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

2500

2000

C

iss

1500

C

oss

1000

Capacitance [pF]

C

rss

500

0

10

VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

V

DS

V

DS

= 80 V

DS

= 50 V

10

5

, Gate-Source Voltage [V]

GS

V

0

0 10 20 30 40 50 60 70

@ Notes : ID =28.0 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor IRFP140A Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual