Fairchild Semiconductor IRFM120A Datasheet
Advanced Power MOSFET
IRFM120A
FEATURES
IEEE802.3af Compatible
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 #A (Max.) @ V
! Lower R
: 0.155 ! (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25%)
A
=70%)
A
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25%)
Linear Derating Factor
*
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
T
V
I
I
V
E
I
E
dv/dt
P
, T
J
T
DSS
D
DM
GS
AS
AR
AR
D
STG
L
DS
*
= 100V
&
'
&
&
(
BV
DSS
R
DS(on)
ID= 2.3 A
SOT-223
1
1. Gate 2. Drain 3. Source
100
2.3
1.84
18
"20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
300
= 100 V
= 0.2 !
2
3
V
A
A
V
mJ
A
mJ
V/ns
W
W/%
%
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
$JA
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Junction-to-Ambient
*
52--
%/W
Rev. C
IRFM120A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
.BV/.T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
Rise Time
t
r
Turn-Off Delay Time
Fall Time
t
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(“Miller”) Charge
gd
(TA=25%unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
100
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.12
--
--
--
--
--
--
--
3.12
370
95
38
14
14
36
28
16
2.7
7.8
--
--
4.0
100
-100
1
10
100
0.2
--
480
110
45
40
40
90
70
22
--
--
V/
V
%
V
nA
#A
)
S
pF
ns
nC
=0V,ID=250#A
GS
I
=250#A See Fig 7
D
V
=5V,ID=250#A
DS
V
=20V
GS
V
=-20V
GS
VDS=30V
VDS=100V
V
=80V,TA=125
DS
V
=10V,ID=1.15A
GS
VDS=40V,ID=1.15A
VGS=0V,VDS=25V,f =1MHz
VDD=50V,ID=9.2A,
R
=18)
G
VDS=80V,VGS=10V,
I
=9.2A
D
See Fig 6 & Fig 12
%
See Fig 5
See Fig 13
-
+
+
+,
+,
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
& Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
' L=35mH, I
( I
+ Pulse Test : Pulse Width = 250#s, Duty Cycl e * 2%
, Essentially Independent of Operating Temperature
- Adjusted for Cisco
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=2.3A, VDD=25V, RG=27), Starting TJ =25%
AS
*9.2A, di/dt*300A/#s, VDD*BV
SD
&
+
, Starting TJ =25%
DSS
--
--
--
--
-98
--
0.34
--
18
1.5
--
--
ns
#
A
V
C
2.3
--
Integral reverse pn-diode
in the MOSFET
T
=25%,IS=2.3A,VGS=0V
J
T
=25%,IF=9.2A
J
di
/dt=100A/#s
F
+
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
8.0 V
1
7 .0 V
10
6.0 V
5 .5 V
5 .0 V
Bo ttom : 4 .5 V
0
10
, Drain Current [A ]
D
I
-1
10
VDS , Drain-Source Voltage [V]
@ Notes :
1. 250 "s Pulse Test
2. TA = 25 oC
0
10
IRFM120A
1
10
150 oC
0
10
, Drain Current [A]
D
I
1
10
25 oC
- 55 oC
-1
10
246810
VGS , Gate-Source Voltage [V]
@ Notes :
1. V
2. V
3. 250
GS
DS
= 0 V
= 40 V
"
s Pulse Test
0.4
]
#
, [
DS(on)
R
0.3
0.2
0.1
VGS = 10 V
VGS = 20 V
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0.0
0 10203040
ID , Drain Current [A]
600
C
iss
400
C
oss
200
Capacitance [pF]
C
rss
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
, Reverse Drain Current [A]
I
150 oC
DR
-1
10
25 oC
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
@ Notes :
1. V
2. 250
GS
= 0 V
"
s Pulse Test
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
10
5
VDS = 20 V
VDS = 50 V
VDS = 80 V
, Gate-Source Voltage [V]
GS
V
0
0
10
1
10
VDS , Drain-Source Voltage [V]
0
0 5 10 15 20
QG , Total Gate Charge [nC]
@ Notes : ID = 9.2 A
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