Fairchild Semiconductor IRFI650B, IRFW650B Datasheet
IRFW650B / IRFI650B
200V N-Channel MOSFET
IRFW650B / IRFI650B
November 2001
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 28A, 200V, R
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.085Ω @VGS = 10 V
DS(on)
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
D
GS
D2-PAK
IRFW Series
GSD
Absolute Maximum Ratings T
I2-PAK
IRFI Series
= 25°C unless otherwise noted
C
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G
D
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S
Symbol Parameter IRFW650B / IRFI650B Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
28 A
17.7 A
112 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
600 mJ
28 A
15.6 mJ
5.5 V/ns
3.13 W
156 W
- Derate above 25°C 1.25 W/°C
, T
T
J
stg
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.8 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. C, November 2001
IRFW650B / IRFI650B
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 200 V, VGS = 0 V
DS
V
= 160 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
200 -- -- V
-- 0.2 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 14 A
V
GS
= 40 V, ID = 14 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.071 0.085 Ω
-- 25 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 330 430 pF
Reverse Transfer Capacitance -- 75 100 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 2600 3400 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 240 490 ns
Turn-Off Delay Time -- 295 600 ns
Turn-Off Fall Time -- 195 400 n s
Total Gate Charge
Gate-Source Charge -- 13 -- nC
Gate-Drain Charge -- 43 -- nC
= 100 V, ID = 32 A,
V
DD
= 25 Ω
R
G
V
= 160 V, ID = 32 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 30 7 0 ns
-- 95 123 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.15mH, IAS = 28A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 32A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 28 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 112 A
= 0 V, IS = 28 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.89 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 32 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 220 -- ns
(Note 4)
Rev. C, November 2001
Typical Characteristics
IRFW650B / IRFI650B
2
10
1
10
, Drain Current [A]
D
I
0
10
10
V
Top : 1 5.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Botto m : 5.0 V
-1
GS
$
Note s :
1. 25 0%s Pulse T es t
&
2. TC = 25
0
10
1
10
VDS, Drain-Source Voltage [V]
0.4
0.3
],
'
[
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
0.0
0306090120
VGS = 10V
VGS = 20V
$
Note : T
&
= 25
J
ID, Drain Current [A]
-55oC
$
Notes :
= 40V
1. V
DS
2. 25 0%s Pulse Test
2
10
1
10
150oC
25oC
0
10
, Drain Current [A]
D
I
-1
10
246810
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
2
10
1
10
&
150
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
&
25
$
Note s :
= 0V
1. V
GS
2. 25 0%s Pulse Te st
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
8000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
12
10
6000
8
C
4000
Capacitance [pF]
2000
0
-1
10
iss
C
oss
$
10
1. V
2. f = 1 MHz
1
Note s :
= 0 V
GS
C
rss
0
10
VDS, Drain-Source Voltage [V]
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 20406080100
QG, Tota l G a te Char g e [n C ]
VDS = 100V
VDS = 160V
VDS = 40V
$
Note : I
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
= 32 A
D
Rev. C, November 2001©2001 Fairchild Semiconductor Corporation
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