Fairchild Semiconductor IRF614B, IRFS614B Datasheet

IRF614B/IRFS614B

250V N-Channel MOSFET

IRF614B/IRFS614B

November 2001

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 2.8A, 250V, R

• Low gate charge ( typical 8.1 nC)

• Low Crss ( typical 7.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 2.0Ω @VGS = 10 V

DS(on)

suited for high efficiency switching DC/DC converters and
switch mode power supplies.

D

G

G

SD

TO-220

IRF Series

GSD

TO-220F

IRFS Series

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter IRF614B IRFS614B Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 250 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

2.8 2.8 * A

1.8 1.8 * A

8.5 8.5 * A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

45 mJ

2.8 A

4.0 mJ

5.5 V/ns

40 22 W

- Derate above 25°C 0.32 0.18 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter IRF614B IRFS614B Units

R

θJC

R

θCS

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case Max. 3.14 5.58 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W

Rev. A, November 2001

IRF614B/IRFS614B

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 250 V, VGS = 0 V

DS

V

= 200 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

250 -- -- V

-- 0.26 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.4 A

V

GS

= 40 V, ID = 1.4 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 1.49 2.0 Ω

-- 2.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 35 45 pF
Reverse Transfer Capacitance -- 7.5 10 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 210 275 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 30 70 ns
Turn-Off Delay Time -- 25 60 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge
Gate-Source Charge -- 1.4 -- nC
Gate-Drain Charge -- 3.5 -- nC

= 125 V, ID = 2.8 A,

V

DD

= 25 Ω

R

G

V

= 200 V, ID = 2.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 6.0 22 ns

-- 8.1 10.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 9.2mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.8A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 8.5 A

= 0 V, IS = 2.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.49 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 2.8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 130 -- ns

(Note 4)

Rev. A, November 2001

Typical Characteristics

IRF614B/IRFS614B

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Botto m : 5.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

!

Note s :

1. 25 0$s Pulse Test

"

2. TC = 25

1

10

VDS, Drain-Source Voltage [V]

10

8

],

6

#

[

DS(ON)

R

4

2

Drain-Source On-Resistance

0

02468

VGS = 10V

VGS = 20V

!

Note : T

"

= 25

J

ID, Drain Current [A]

0

10

150oC

25oC

, Drain Current [A]

D

I

-1

10

246810

-55oC

!

Note s :

= 40V

1. V

DS

2. 25 0$s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

"

150

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

25

!

Note s :

= 0V

1. V

GS

2. 25 0$s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

500

400

300

200

Capacitance [pF]

100

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

!

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0.0 1.5 3.0 4.5 6.0 7.5 9.0

QG, Tota l G a te C h a rg e [n C ]

VDS = 125V

VDS = 200V

VDS = 50V

!

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge C haracteristics

= 2.8 A

D

Rev. A, November 2001©2001 Fairchild Semiconductor Corporation