Fairchild Semiconductor IRF550A Datasheet

Advanced Power MOSFET

IRF550A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

175 Operating Temperature

C

Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.032 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= 100 V

DSS

DS(on)

= 40 A

D

= 0.04

Ω

TO-220

1

2

3

1.Gate 2. Drain 3. Source

100

40

28.3

1

2

1 1

3

160

+

_

640

16.7

6.5

20

40

167

1.11

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

R

JC

θ

R

CS

θ

R

θ

JA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

0.9

--

62.5

Ο

C

/W

Rev. B

IRF550A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

V

--

0.11

--

27.44 1750

420 185

17 20 80 45 75

13.2

34.8

--

4.0

100

-100 10

100

0.04

--

2270

485 215

50 50

160 100

97

--

V/

nA

µ

pF

ns

nC

V

Ο

V

A

Ω

=0V,ID=250 A

GS

I

=250 A See Fig 7

C

D

V

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=20A

V

GS

=40V,ID=20A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=40A,

DD

=6.2

R

G

See Fig 13

V

=80V,VGS=10V,

DS

I

=40A

D

See Fig 6 & Fig 12

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=0.6mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=40A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

40A, di/dt 470A/ s, VDD BV

_

<

_

<

µ

Ω

, Starting TJ =25

DSS

O O

_

<

40

--

1

--

4

--

o

C

o

C

--

135

0.65

160

1.6

--

Integral reverse pn-diode

A

in the MOSFET

V

ns

µ

C

Ο

C

T

=25 ,IS=40A,VGS=0V

J

Ο

C

T

=25 ,IF=40A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

-1

GS

10

VDS , Drain-Source Voltage [V]

2

10

1

10

, Drain Current [A]

D

I

0

10

0

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

IRF550A

2

10

o

175

C

1

10

25 oC

, Drain Current [A]

D

I

0

1

10

2 4 6 8 10

- 55

o

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

0.06

0.05

]

0.04

Ω

, [

0.03

DS(on)

R

0.02

Drain-Source On-Resistance

0.01

0.00 0 25 50 75 100 125 150 175

VGS = 10 V

ID , Drain Current [A]

3000

C

iss

2000

C

oss

1000

Capacitance [pF]

C

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

VGS = 20 V

@ Note : TJ = 25 oC

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

175 oC

, Reverse Drain Current [A]

DR

I

25 oC

0

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

@ Notes :

1. V

= 0 V

GS

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

10

5

V

DS

VDS = 80 V

DS

= 50 V

, Gate-Source Voltage [V]

GS

0

10

1

10

VDS , Drain-Source Voltage [V]

V

0

0 10 20 30 40 50 60 70 80

QG , Total Gate Charge [nC]

@ Notes : ID =40.0 A