Fairchild Semiconductor IRF510A Datasheet

Advanced Power MOSFET

IRF510A

FEATURES

n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175°C Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ V
n Lower R

: 0.289 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25℃)

C

=100℃)

C

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (2)
Total Power Dissipation (T

=25℃)

C

Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

DS

= 100V

(1)

(2)
(1)

(1)

BV

DSS

R

DS(on)

ID= 5.6 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

100

5.6
4

20

±20

63

5.6

3.3

6.5

33

0.22

- 55 to +175

300

= 100 V

= 0.4 Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

4.51

--

62.5

°C/W

Rev. B1

IRF510A

N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

ΔBV/ΔT

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain (“Miller”) Charge

gd

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

100

--

2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.11

--

--

--

--

--

--

3.49
190

55
21
10
14
28
18

8.5

1.6

4.1

--

--

4.0

100

-100
10

100

0.4

--

240

65
25
30
40
70
50
12

--

--

V

V/°C

V

nA

μA

Ω

S

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA See Fig 7

D

V

=5V,ID=250µA

DS

V

=20V

GS

V

=-20V

GS

VDS=100V
V

=80V,TC=150°C

DS

V

=10V,ID=2.8A

GS

VDS=40V,ID=2.8A
VGS=0V,VDS=25V,f =1MHz

VDD=50V,ID=5.6A,
R

=24Ω

G

See Fig 13 (4)(5)

=80V,VGS=10V,

V

DS

I

=5.6A

D

See Fig 6 & Fig 12 (4)(5)

(4)
(4)

See Fig 5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

(1) Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
(2) L=3mH, I
(3) I

(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperat ure

Continuous Source Current

S

Pulsed-Source Current (1)
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=5.6A, VDD=25V, RG=27Ω, Starting TJ =25°C

AS

≤ 5.6A, di/dt ≤ 250A/μs, V

SD

DD

≤ BV

DSS

--

--

(4)

--

--

--

, Starting TJ =25°C

--

--

--

85

0.23

5.6
20

1.5

--

--

A
V

ns

µC

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=5.6A,VGS=0V

J

T

=25°C,IF=5.6A

J

di

/dt=100A/µs

F

(4)

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 1 5 V

1

10

1 0 V

8.0 V
7 .0 V

6.0 V
5 .5 V
5 .0 V
Bo ttom : 4 .5 V

0

10

, Drain Current [A ]

D

I

-1

10

-1

10

VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRF510A

1

10

175 oC

0

10

25 oC

, Drain Current [A]

D

I

-1

1

10

10

246810

- 55 oC

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

GS
DS

= 0 V
= 40 V

µ

s Pulse Test

0.8

]

Ω

, [

DS(on)

R

0.6

0.4

VGS = 10 V

0.2

Drain-Source On-Resistance

0.0
0 5 10 15 20

ID , Drain Current [A]

350

280

C

iss

210

C

oss

140

Capacitance [pF]

C

rss

70

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

C

= C

rss

gd

1

10

VDS , Drain-Source Voltage [V]

VGS = 20 V

@ Note : TJ = 25 oC

gd

@ Notes :

1. V

2. f = 1 MHz

GS

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

, Reverse Drain Current [A]

175 oC

DR

I

-1

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

25 oC

@ Notes :

1. V

2. 250

GS

= 0 V

µ

s Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Voltage [V]

GS

V

0

0246810

VDS = 20 V

VDS = 50 V

VDS = 80 V

@ Notes : ID = 5.6 A

QG , Total Gate Charge [nC]