Fairchild Semiconductor HUFA76645P3 Datasheet

Data Sheet January 2002

75A, 100V, 0.015 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

(FLANGE)

HUFA76645P3

DRAIN

GATE

GATE

SOURCE

HUFA76645S3S

DRAIN

(FLANGE)

Symbol

HUFA76645P3, HUFA76645S3S

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

DS(ON)
DS(ON)

= 0.014Ω, V
= 0.015Ω, V

GS

= 10V

GS

= 5V

GS

Curves

D

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress on ly rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

TC = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA76645P3 TO-220AB 76645P
HUFA76645S3S TO-263AB 76645S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76645S3ST.

HUFA76645P3,

HUFA76645S3S UNITS

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

100 V
100 V
±16 V

75
75
63
62

Figure 4

310

2.07

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2002 Fairchild Semiconductor Corpo ration HUFA76645P3, HUFA76645S3S Rev. B

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

HUFA76645P3, HUFA76645S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

I

D

TO-220 and TO-263 - - 0.48oC/W

VDD = 50V, ID = 62A
V
(Figures 15, 21, 22)

r

f

VDD = 50V, ID = 75A
V
R

r

(Figures 16, 21, 22)

f

VGS = 0V to 5V - 70 84 nC
VGS = 0V to 1V - 3.8 4.6 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 100 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V

= 90V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 75A, VGS = 10V (Figures 9, 10) - 0.012 0.014 Ω
= 63A, VGS = 5V (Figure 9) - 0.013 0.015 Ω
= 62A, VGS = 4.5V (Figure 9) - 0.0135 0.0155 Ω

--62oC/W

- - 490 ns

= 4.5V, RGS = 2.4Ω

GS

-17-ns

- 310 - ns

-46-ns

- 155 - ns

- - 300 ns

- - 175 ns

= 10V,

GS
GS

= 2.4Ω

-11-ns

- 106 - ns

-69-ns

- 175 - ns

- - 365 ns

= 0V to 10V VDD = 50V,

I

= 63A,

D

= 1.0mA

I

g(REF)

- 127 153 nC

(Figures 14, 19, 20)

-10-nC

-34-nC

- 4400 - pF

- 900 - pF

- 280 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2002 Fairchild Semiconductor Corpo ration HUFA76645P3, HUFA76645S3S Rev. B

SD

rr

RR

ISD = 63A - - 1.25 V

= 30A - - 1.0 V

I

SD

ISD = 63A, dISD/dt = 100A/µs - - 128 ns
ISD = 63A, dISD/dt = 100A/µs - - 520 nC

Typical Performance Curves

5

5

HUFA76645P3, HUFA76645S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

V

= 10V

GS

60

V

= 4.5V

GS

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150 17

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

x R

0

θJC

+ T

1

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, PEAK CURRENT (A)
I

DM

2000

1000

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corpo ration HUFA76645P3, HUFA76645S3S Rev. B

1