Fairchild Semiconductor HUFA75333G3, HUFA75333P3 Datasheet

HUFA75333G3, HUFA75333P3, HUFA75333S3S

Data Sheet December 2001

66A, 55V, 0.016 Ohm. N-Channel UltraFET
Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovat ive Ul traFET® pr ocess . This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outsta nding performance . This devi ce i s c apa ble
of withstanding hi gh energy in the avalanch e mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching convertors, motor drivers, relay drivers, low­voltage bus switc hes, and power managem ent in portable
and battery-operated products.

Formerly developmental type TA75333.

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75333G3 TO-247 75333G
HUFA75333P3 TO-220AB 75333P
HUFA75333S3S TO-263AB 75333S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75333S3ST.

Features

• 66A, 55V

• Simulation Models

- T emp eratu re Com pensat ed PSPI CE® and SABER™
Models

- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Wi dth C urve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surfac e Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

JEDEC TO-263AB

GATE

SOURCE

This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

©2001 Fairchild Semiconductor Corpo ration HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B

HUFA753 33 G3, H UFA75333P3, HUFA75333S3S

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D

DM

AS

D

66

Figure 4

Figures 6, 14, 15

150

1

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 150oC.

J

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 66A, VGS = 10V (Figure 9) - 0.013 0.016 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

θJC
θJA

ON

r

f

OFF

(Figure 3) - - 1
TO-247 - - 30
TO-220, TO-263 - - 62

VDD = 30V, ID ≅ 66A,
R

= 0.455Ω, VGS = 10V,

L

= 6.8Ω

R

GS

--100ns

-12- ns

-55- ns

-11- ns

-25- ns

- - 55 ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

g(TOT)VGS

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 30V,

≅ 66A,

I

VGS = 0V to 10V - 40 50 nC
VGS = 0V to 2V - 2.5 3.0 nC

D

= 0.455Ω

R

L

I

g(REF)

= 1.0mA

(Figure 13)

-7085nC

-6.2- nC

-16-nC

©2001 Fairchild Semiconductor Corpo ration HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B

5

5

HUFA753 33 G3, H UFA75333P3, HUFA75333S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 17

ISS

OSS

RSS

SD

rr
RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 130 0 - pF

- 480 - pF

- 115 - pF

ISD = 66A - - 1.25 V
ISD = 66A, dISD/dt = 100A/µs--75ns
ISD = 66A, dISD/dt = 100A/µs - - 140 nC

70

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25

50 75 100 125 150 17

TC, CASE TEMPERA TURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θJC

+ T

θJC

0

10

t

2

C

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2001 Fairchild Semiconductor Corpo ration HUFA75333G3, HUFA75333P3, HUFA75333S3S Rev. B

1