Fairchild Semiconductor HUFA75332G3, HUFA75332P3, HUFA75332S3S Datasheet

HUFA75332G3, HUFA75332P3, HUFA75332S3S

Data Sheet June 2002

60A, 55V, 0.019 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovati ve Ul tra FET® proce ss . This

advanced process technolog y
achieves the lowest possible on-resistance per silicon ar ea,
resultin g in outstanding performance. This device is capab le
of withstanding hi gh energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in appli cations where power
efficiency is important, such as switching regulators,
switchi ng converters, motor drivers, relay drivers , low­voltage bus switches, and power manage me nt i n po rtab le
and battery-operated products.

Formerly developmental ty pe TA75332.

Ordering Information

PART NUMBER PACKAGE BRAND

HUFA75332G3 TO-247 75332G
HUFA75332P3 TO-220AB 75332P
HUFA75332S3S TO-263AB 75332S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75332S3ST.

Features

• 60A, 55V

• Simulation Model s

- Temperat ure Compe nsa ted PSPI CE®

and SABER™

Models

- SPICE and SABER Thermal Impedance Models
Av ailable on the WEB at: www.fair childsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

JEDEC TO-263AB

GATE

SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.ae council.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A

HUFA75332G3, HUFA75332P3, HUFA75332S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T

D

DM

AS

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Rati ngs” may cause permane nt damage to the device. This is a stress only rating and oper ation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60

Figure 4

Figure 6

145

0.97

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

= 25oC to 150oC.

1. T

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain t o Source Breakdown Voltage BV
Zero Gat e V ol tag e D rain Curre nt I

Gate to Sour c e Le ak ag e C urr e nt I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 60A, VGS = 10V (Figure 9) - 0.016 0.019 Ω

THERMAL SPECIFICATIONS

Thermal R esis ta nc e Ju ncti on to Case R
Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

θJC
θJA

ON

r

f

OFF

(Figure 3) - - 1.03
TO-247 - - 30
TO-220, TO-263 - - 62

VDD = 30V, ID ≅ 60A,
R

= 0.50Ω, VGS = 10V,

L

R

= 6.8Ω

GS

--100ns

-12- ns

-55- ns

-11- ns

-25- ns

- - 55 ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charg e Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gat e Ch arg e Q
Gate to Source Gate Charg e Q
Reverse Transfer Capacitance Q

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 30V,

I

≅ 60A,

VGS = 0V to 10V - 40 50 nC
VGS = 0V to 2V - 2.5 3.0 nC

D

R

= 0.50Ω

L

I

g(REF)

= 1.0mA

(Figure 13)

-7085nC

-6-nC

-15-nC

©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A

HUFA75332G3, HUFA75332P3, HUFA75332S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Vol tage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS
OSS
RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

-1300- pF

-480- pF

-115- pF

ISD = 60A - - 1.25 V
ISD = 60A, dISD/dt = 100A/µs--75ns
ISD = 60A, dISD/dt = 100A/µs - - 140 nC

80

60

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

40

20

, DRAIN CURRENT (A)

D

I

0

25

50 75 100 125 150 175

TC, CASE TEMP ER ATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θJC

θJC

0

10

t

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2002 Fairchild Semiconductor Corporation HUFA75332G3, HUFA75332P3, HUFA75332S3S Rev. A