Fairchild Semiconductor HUFA75329D3, HUFA75329D3S Datasheet
HUFA75329D3, HUFA75329D3S
Data Sheet June 1999 File Number 4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel pow er MOSFETs
are manufactured using the
innovat ive Ul traFET® pr ocess . This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outsta ndi ng p erformance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switch in g regul ators,
switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER PACKAGE BRAND
HUFA75329D3 TO-251AA 75329D
HUFA75329D3S TO-252AA 75329D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST.
Features
• 20A, 55V
• Simulation Models
- Temperature Com pens ated PSPI CE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
This product has be en desi gned t o mee t t he ex tre me test con diti ons a nd e nviro nment dema nded by the autom otive indu str y. Fo r a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
GATE
SOURCE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation HUFA75329D3, HUFA75329D3S Rev. A
HUFA75329D3, HUFA75329D3S
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
55 V
55 V
±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
AS
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
20
Figure 4
Figure 6
128
0.86
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. T
= 25oC to 150oC.
J
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSSID
DSS
GSS
= 250µA, VGS = 0V (Figure 11) 55 - - V
VDS = 50V, VGS = 0V - - 1 µA
V
= 45V, VGS = 0V, TC = 150oC--250µA
DS
VGS = ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
GS(TH)VGS
DS(ON)ID
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 20A, VGS = 10V (Figure 9) - 0.022 0.026 Ω
THERMAL SPECI FICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
θJC
θJA
ON
r
f
OFF
(Figure 3) - - 1.17
TO-251, TO-252 - - 100
VDD = 30V, ID ≅ 20A,
R
= 1.5Ω, VGS = 10V,
L
= 9.1Ω
R
GS
- - 60 ns
-7-ns
-30- ns
-10- ns
-33- ns
- - 65 ns
o
C/W
o
C/W
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q
g(TOT)VGS
g(10)
g(TH)
gs
gd
= 0V to 20V VDD = 30V,
≅ 20A,
I
VGS = 0V to 10V - 32 40 nC
VGS = 0V to 2V - 2.0 2.5 nC
D
R
= 1.5Ω
L
I
g(REF)
= 1.0mA
(Figure 13)
-5065nC
-5-nC
-13-nC
©2001 Fairchild Semiconductor Corporation HUFA75329D3, HUFA75329D3S Rev. A
HUFA75329D3, HUFA75329D3S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TC, CASE TEMPERATURE (oC)
125 175
ISS
OSS
RSS
SD
rr
RR
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
- 1060 - pF
- 405 - pF
-95-pF
ISD = 20A - - 1.25 V
ISD = 20A, dISD/dt = 100A/µs--68ns
ISD = 20A, dISD/dt = 100A/µs - - 120 nC
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25
50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
SINGLE PULSE
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
1/t2
x R
θJC
θJC
0
10
2
+ T
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation HUFA75329D3, HUFA75329D3S Rev. A
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