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Data Sheet December 2001
50A, 100V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
(FLANGE)
HUF76639P3
DRAIN
GATE
GATE
OURCE
HUF76639S3S
DRAIN
(FLANGE)
Symbol
D
HUF76639P3, HUF76639S3S
Features
• Ultra Low On-Resistance
-r
-r
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
DS(ON)
DS(ON)
= 0.026Ω, V
= 0.027Ω,
GS
GS
V
GS
= 10V
= 5V
Curves
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
= 25oC to 150oC.
1. T
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
TC = 25oC, Unless Otherwise Specified
PART NUMBER PACKAGE BRAND
HUF76639P3 TO-220AB 76639P
HUF76639S3S TO-263AB 76639S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76639S3ST.
HUF76639P3, HUF76639S3S UNITS
DSS
DGR
GS
D
D
D
D
DM
D
, T
J
STG
L
pkg
100 V
100 V
±16 V
50
51
35
34
Figure 4
180
1.2
-55 to 175
300
260
A
A
A
A
W
W/oC
o
C
o
C
o
C
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corpo ration HUF76639P3, HUF76639S3S Rev. B
For severe environments, see our Automotive HUFA series.
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HUF76639P3, HUF76639S3S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
= 4.5V)
GS
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
I
D
DSS
VDS = 95V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
d(ON)
d(OFF)
OFF
ON
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(5)
g(TH)
ISS
OSS
RSS
VGS = ±16V - - ±100 nA
I
D
I
D
TO-220 and TO-263 - - 0.83oC/W
VDD = 50V, ID = 34A
V
(Figures 15, 21, 22)
r
f
VDD = 50V, ID = 51A
V
(Figures 16, 21, 22)
r
f
VGS = 0V to 5V - 39 47 nC
VGS = 0V to 1V - 2.0 2.4 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
= 250µA, VGS = 0V (Figure 12) 100 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V
= 90V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 51A, VGS = 10V (Figures 9, 10) - 0.023 0.026 Ω
= 35A, VGS = 5V (Figure 9) - 0.024 0.027 Ω
= 34A, VGS = 4.5V (Figure 9) - 0.025 0.028 Ω
--62oC/W
- - 336 ns
= 4.5V, RGS = 12Ω
GS
-17-ns
- 207 - ns
-83-ns
- 136 - ns
- - 328 ns
- - 96 ns
= 10V, RGS = 12Ω
GS
-10-ns
-55-ns
- 151 - ns
- 110 - ns
- - 392 ns
= 0V to 10V VDD = 50V,
I
= 35A,
D
= 1.0mA
I
g(REF)
-7186nC
(Figures 14, 19, 20)
-6-nC
-19-nC
- 2400 - pF
- 520 - pF
- 140 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUF76639P3, HUF76639S3S Rev. B
SD
rr
RR
ISD = 35A - - 1.25 V
= 15A - - 1.0 V
I
SD
ISD = 35A, dISD/dt = 100A/µs - - 137 ns
ISD = 35A, dISD/dt = 100A/µs - - 503 nC
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Typical Performance Curves
HUF76639P3, HUF76639S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 17
125
150
TC, CASE TEMPERA TURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
60
50
V
= 10V
40
V
30
GS
GS
= 4.5V
20
, DRAIN CURRENT (A)
D
I
10
0
25 50 75 100 125 150 17
TC, CASE TEMPERA TURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
1/t2
0
x R
θJC
+ T
t
2
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
, PEAK CURRENT (A)
I
DM
1000
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
-5
10
VGS = 10V
VGS = 5V
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corpo ration HUF76639P3, HUF76639S3S Rev. B
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