Fairchild Semiconductor HUF76633P3, HUF76633S3S Datasheet

)

Data Sheet December 2001

38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

(FLANGE)

HUF76633P3

DRAIN

GATE

GATE

SOURCE

HUF76633S3S

DRAIN

(FLANGE

Symbol

D

HUF76633P3, HUF76633S3S

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.Fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Ordering Information

DS(ON)
DS(ON)

= 0.035Ω, V
= 0.036Ω,

GS

GS

V

GS

= 10V
= 5V

Curves

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . T

Maximum Temperature for Solder ing

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “Absolute Max imum Ratings” may cause p ermane nt damage to the device. This is a st ress only rating an d operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . I

C

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

= 20kΩ) (Note 1) . . . . . . . . . . . . .V

GS

TC = 25oC, Unless Otherwise Specified

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

For severe environments, see our Automotive HUFA series.

PART NUMBER PACKAGE BRAND

HUF76633P3 TO-220AB 76633P
HUF76633S3S TO-263AB 76633S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76633S3ST.

HUF76633P3, HUF76633S3S UNITS

100 V
100 V
±16 V

38
39
27
27

Figure 4

145

0.97

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

©2001 Fairchild Semiconductor Corpo ration HUF76633P3, HUF76633S3S Rev. B

HUF76633P3, HUF76633S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

R

Ambient
SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

θJC
θJA

ON

r

f

OFF

ON

r

f

OFF

g(5)

g(TH)

gs

gd

ISS
OSS
RSS

= 250µA, VGS = 0V (Figure 12) 100 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V

I

D

VDS = 95V, VGS = 0V - - 1 µA

= 90V, VGS = 0V, TC = 150oC - - 250 µA

V

DS

VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 39A, VGS = 10V (Figures 9, 10) - 0.029 0.035 Ω

I

= 27A, VGS = 5V (Figure 9) - 0.030 0.036 Ω

D

I

= 27A, VGS = 4.5V (Figure 9) - 0.031 0.037 Ω

D

TO-220 and TO-263 - - 1.03oC/W

VDD = 50V, ID = 27A

= 4.5V, RGS = 4.7Ω

V

GS

(Figures 15, 21, 22)

VDD = 50V, ID = 39A

= 10V,

V

GS

R

= 5.1Ω

GS

(Figures 16, 21, 22)

= 0V to 10V VDD = 50V,
VGS = 0V to 5V - 30 37 nC
VGS = 0V to 1V - 2 2.4 nC

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 27A,

I

D

= 1.0mA

I

g(REF)

(Figures 14, 19, 20)

--62oC/W

- - 185 ns

-12-ns

- 110 - ns

-43-ns

-58-ns

- - 150 ns

- - 95 ns

-7.5-ns

-55-ns

-63-ns

- 83 - ns

- - 220 ns

-5667nC

-6-nC

-15-nC

- 1820 - pF

- 415 - pF

- 115 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUF76633P3, HUF76633S3S Rev. B

SD

rr

RR

ISD = 27A - - 1.25 V

= 13A - - 1.0 V

I

SD

ISD = 27A, dISD/dt = 100A/µs - - 113 ns
ISD = 27A, dISD/dt = 100A/µs - - 425 nC

Typical Performance Curves

5

5

HUF76633P3, HUF76633S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

50

40

V

= 10V

GS

30

V

= 4.5V

GS

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 17

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

x R

0

θJC

+ T

1

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, PEAK CURRENT (A)
I

500

100

DM

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

30

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUF76633P3, HUF76633S3S Rev. B

1