Fairchild Semiconductor HUF76429P3, HUF76429S3S Datasheet

)

Data Sheet December 2001

44A, 60V, 0.025 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

(FLANGE)

HUF76429P3

DRAIN

GATE

GATE

SOURCE

HUF76429S3S

DRAIN

(FLANGE

Symbol

D

HUF76429P3, HUF76429S3S

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Ordering Information

DS(ON)
DS(ON)

= 0.022Ω, V
= 0.025Ω, V

GS

= 10V

GS

= 5V

GS

Curves

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

TC = 25oC, Unless Otherwise Specified

For severe environments, see our Automotive HUFA series.

PART NUMBER PACKAGE BRAND

HUF76429P3 TO-220AB 76429P
HUF76429S3S TO-263AB 76429S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76429S3ST.

HUF76429P3, HUF76429S3S UNITS

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

60 V
60 V

±16 V

44
47
31
30

Figure 4

110

0.74

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

©2001 Fairchild Semiconductor Corpo ration HUF76429P3, HUF76429S3S Rev. B

HUF76429P3, HUF76429S3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

SWITCHING SPECIFICATIONS (V

GS

= 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 55V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

I

D

TO-220 and TO-263 - - 1.36oC/W

VDD = 30V, ID = 30A
V
(Figures 15, 21, 22)

r

f

VDD = 30V, ID = 47A
V
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 21 25 nC
VGS = 0V to 1V - 1.3 1.6 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 55 - - V

= 50V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 47A, VGS = 10V (Figures 9, 10) - 0.018 0.022 Ω
= 31A, VGS = 5V (Figure 9) - 0.021 0.025 Ω
= 30A, VGS = 4.5V (Figure 9) - 0.022 0.027 Ω

--62oC/W

- - 325 ns

= 4.5V, RGS = 7.5Ω

GS

-13-ns

- 203 - ns

-30-ns

-74-ns

- - 155 ns

- - 160 ns

= 10V,RGS = 8.2Ω

GS

-7.8-ns

- 100 - ns

-51-ns

- 104 - ns

- - 235 ns

= 0V to 10V VDD = 30V,

= 31A,

I

D

= 1.0mA

I

g(REF)

-3846nC

(Figures 14, 19, 20)

-3.8-nC

-9.7-nC

- 1480 - pF

- 440 - pF

-90-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUF76429P3, HUF76429S3S Rev. B

SD

rr

RR

ISD = 44A - - 1.25 V

= 22A - - 1.00 V

I

SD

ISD = 31A, dISD/dt = 100A/µs--98ns
ISD = 31A, dISD/dt = 100A/µs - - 230 nC

Typical Performance Curves

5

5

HUF76429P3, HUF76429S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

50

40

V

= 10V

GS

30

V

= 4.5V

GS

20

, DRAIN CURRENT (A)

D

I

10

0

25

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

x R

θJC

+ T

17

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

600

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

30

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUF76429P3, HUF76429S3S Rev. B

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