Fairchild Semiconductor HUF76423D3, HUF76423D3S Datasheet

S

Data Sheet December 2001

20A, 60V, 0.037 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETFairchild

Packaging

JEDEC TO-251AA JEDEC TO-252AA

DRAIN

(FLANGE)

HUF76423D3

SOURCE

DRAIN

GATE

GATE
OURCE

HUF76423D3S

DRAIN

(FLANGE)

Symbol

HUF76423D3, HUF76423D3S

Features

• Ultra Low On-Resistance

-r

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

DS(ON)
DS(ON)

= 0.032Ω, V
= 0.037Ω,

GS

GS

V

GS

= 10V
= 5V

Curves

D

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. T

= 25oC to 150oC.

J

CAUTION: Stresses above those listed in “Absolute Ma ximum Ratings” m ay cause per manen t damag e to t he device. This is a stress o nly rating and operation of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

TC = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76423D3 TO-251AA 76423D
HUF76423D3S TO-252AA 76423D

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76423D3ST.

HUF76423D3,

HUF76423D3S UNITS

DSS

DGR

GS

D
D
D
D

DM

D

, T

J

STG

L

pkg

60 V
60 V

±16 V

20
20
20
20

Figure 4

85

0.567

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corpo ration HUF76423D3, HUF76423D3S Rev. B

For severe environments, see our Automotive HUFA series.

HUF76423D3, HUF76423D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

R

Ambient
SWITCHING SPECIFICATIONS (V

GS

= 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

θJC
θJA

ON

r

f

OFF

ON

r

f

OFF

g(5)

g(TH)

gs

gd

ISS
OSS
RSS

= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 55 - - V

I

D

VDS = 55V, VGS = 0V - - 1 µA

= 50V, VGS = 0V, TC = 150oC - - 250 µA

V

DS

VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 20A, VGS = 10V (Figures 9, 10) - 0.027 0.032 Ω

I

= 20A, VGS = 5V (Figure 9) - 0.031 0.037 Ω

D

I

= 20A, VGS = 4.5V (Figure 9) - 0.033 0.040 Ω

D

TO-251 and TO-252 - - 1.76oC/W

VDD = 30V, ID = 20A

= 4.5V, RGS = 10Ω

V

GS

(Figures 15, 21, 22)

VDD = 30V, ID = 20A

= 10V,

V

GS

R

= 10Ω

GS

(Figures 16, 21, 22)

= 0V to 10V VDD = 30V,
VGS = 0V to 5V - 16 20 nC
VGS = 0V to 1V - 1.2 1.5 nC

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 20A,

I

D

= 1.0mA

I

g(REF)

(Figures 14, 19, 20)

- - 100

o

C/W

- - 240 ns

-12-ns

- 145 - ns

-27-ns

-50-ns

- - 120 ns

- - 65 ns

-7-ns

-35-ns

-52-ns

- 50 - ns

- - 155 ns

-2834nC

-3.5-nC

-7-nC

- 1060 - pF

- 315 - pF

-65-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUF76423D3, HUF76423D3S Rev. B

SD

rr

RR

ISD = 20A - - 1.25 V

= 10A - - 1.0 V

I

SD

ISD = 20A, dISD/dt = 100A/µs--90ns
ISD = 20A, dISD/dt = 100A/µs - - 225 nC

Typical Performance Curves

5

5

1

1

HUF76423D3, HUF76423D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 17

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

10

-3

t, RECTANGULAR PULSE DURATION (s)

25

20

V

15

GS

= 4.5V

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150 17

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

JC

θ

10

+ T

JC

θ

0

V

= 10V

GS

1

t

2

C

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

-4

10

VGS = 5V

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

0

C

150

10

FIGURE 4. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUF76423D3, HUF76423D3S Rev. B