Fairchild Semiconductor HUF76145P3, HUF76145S3S Datasheet

HUF76145P3, HUF76145S3S

Data Sheet December 2001

75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel pow er MOSFETs are manufactured using the innovative UltraFET™ process.

This advan ced process technology achieves the lowest possible on-resistance per silicon area, resulting in outsta nding performance. This device is c apa ble of withstanding hi gh energy in the avalanche mode an d the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switch es, and power management in portable and battery-operated products.

Formerly developmental type TA76145.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76145P3 TO-220AB 76145P HUF76145S3S TO-263AB 76145S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.

Features

• Logic Level Gate Drive

• 75A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

DS(ON)

= 0.0045Ω

Model

• Temperature Compensating SABER™ Model

• Thermal Impedance SPICE Mode l

• Thermal Impedance SABER Model

• Pea k Cu rrent vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

GATE

Symbol

JEDEC TO-263AB

GATE

SOURCE

DRAIN (FLANGE)

HUF76145P3, HUF76145S3S

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

30 V 30 V

±16 V

Drain Current

Continuous (T

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

, T

D D D

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

75 75 75

Figure 4

Figure 6

270

2.17

-40 to 150

300 260

A A A

W/oC

NOTE:

1. T

= 25oC to 150oC.

Electrical Specifications

TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS

(VGS = 4.5V) Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t

DSSID

DSS

GSS

θJC

θJA

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V VDS = 25V, VGS = 0V - - 1 µA V

= 25V, VGS = 0V, TC = 150oC - - 250 µA

VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 75A, VGS = 10V (Figures 9, 10) - 0.0035 0.0045 Ω I

= 75A, VGS = 5V (Figure 9) - 0.0043 0.0058 Ω

= 75A, VGS = 4.5V (Figure 9) - 0.0046 0.0065 Ω

(Figure 3) - - 0.46 TO-220 and TO-263 - - 62

VDD = 15V, ID ≅ 75A,

= 0.20Ω, VGS = 4.5V,

= 2.5Ω

(Figure 15)

- - 255 ns

-26-ns

- 145 - ns

C/W C/W

-35-ns

-39-ns

- - 110 ns

HUF76145P3, HUF76145S3S

Electrical Specifications

TA = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (V

= 10V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q Gate Charge at 5V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

VDD = 15V, ID ≅ 75A, R

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

R (Figure 16)

VGS = 0V to 5V - 73 88 nC VGS = 0V to 1 V - 4.65 5.6 nC

= 0.20Ω, VGS = 10V,

= 2.2Ω

= 0V to 10V VDD = 15V,

≅ 75A,

= 0.20Ω

g(REF)

(Figure 14)

- - 110 ns

-16-ns

-57-ns

-53-ns

- 38 - ns

- - 135 ns

- 130 156 nC

= 1.0mA

- 12.30 - nC

- 40.00 - nC

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V Reverse Recovery Time t Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPAT ION MULTIPLIER

0255075100 15

TA, AMBIENT TEMPERATURE (oC)

ISS

OSS

RSS

VDS = 25V, VGS = 0V,

- 4900 - pF f = 1MHz (Figure 13)

- 2520 - pF

- 560 - pF

ISD = 75A - - 1.25 V ISD = 75A, dISD/dt = 100A/µs - - 115 ns ISD = 75A, dISD/dt = 100A/µs - - 255 nC

= 10V

= 4.5V

, DRAIN CURRENT (A)

125

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

HUF76145P3, HUF76145S3S

Typical Performance Curves

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

THERMAL IMPEDANCE

SINGLE PULSE

0.01

5000

1000

-5

-4

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

(Continued)

-3

-2

t, RECTANGULAR PULSE DURATION (s)

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

TC = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

x R

θJC

C DERATE PEAK

θJC

175 - T

150

+ T

VGS = 10V

, PEAK CURRENT (A) I

TRANSCONDUCTANCE MAY LIMIT CURRENT

100

IN THIS REGION

-5

-4

VGS = 5V

-3

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

1000

100µs

100

OPERATION IN THIS AREA MAY BE

, DRAIN CURRENT (A)

LIMITED BY r

SINGLE PULSE TJ = MAX RATED

110100

DS(ON)

= 25oC

, DRAIN TO SOURCE VOLTAGE (V)

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-2

1000

100

-1

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

STARTING TJ = 25oC

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

0.01

0.1

11010

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

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