Fairchild Semiconductor HUF76132SK8 Datasheet

Data Sheet January 2003

HUF76132SK8

11.5A, 30V, 0.0115 Ohm, N-C hannel, Logic
Level UltraFET Power MOSFET

This N-Channel powe r MOSFET i s
manufactured using the innovative
UltraFET™ process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery­operated products.

Formerly developmental ty pe TA76131.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76132SK8 MS-012AA 76132SK8

NOTE: When ordering, use the e ntire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76132SK8T.

Features

• Logic Level Gate Drive

• 11.5A, 30V

• Simulation Model s

- Temperature Compensated PSPICE

®

and SABER³™

Electrical Models

- SPICE and SABER

Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

SOURCE(1)

DRAIN(8)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

SOURCE(2)

SOURCE(3)

GATE(4)

5

3

4

DRAIN(7)

DRAIN(6)

DRAIN(5)

©2003 Fairchild Semiconductor Corporation HUF76132SK8 Rev. B1

HUF76132SK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±20 V

Drain Current

Continuous (T

= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

A

Continuous (TA= 100oC, VGS = 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D
D
D

DM

AS

D

11.5

3.3

3.2

Figure 4

Figures 6, 17, 18

2.5
20

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Te chbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Rati ngs” may cause permane nt damage to the device. This is a stress only rating and oper ation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A
A
A

W

mW/oC

o

C

o

C

o

C

NOTES:

= 25oC to 125oC.

1. T

J

o

C/W measured using FR-4 board with 0.76 in2 copper pad at 10 second.

2. 50

o

C/W measured using FR-4 board with 0.0115 in2 copper pad at 1000 seconds.

3. 189

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain t o Source Breakdown Voltage BV
Zero Gat e V ol tag e D rain Current I

Gate to Sour c e Le ak ag e C urr e nt I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
V

= 25V, VGS = 0V, TC = 150oC--250µA

DS

VGS = ±20V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 11.5A, VGS = 10V (Figures 9, 10) - 0.0105 0.0115 Ω
I

= 3.3A, VGS = 5V (Figure 9) - 0.0 125 0.015 Ω

D

I

= 3.2A, VGS = 4.5V (F igure 9) - 0.013 0.016 Ω

D

Pad Area = 0.76 in2 (Note 2) - - 50
Pad Area = 0.054 in
Pad Area = 0.0115 in

VDD = 15V, ID ≅ 3.2 A, RL = 4.7Ω,
V

= 4.5V, RGS = 6.8Ω

GS

(Figures 15, 2 1, 22)

2

(Figure 23) - - 152

2

(Figure 23) - - 189

- - 80 ns

-18-ns

o
o
o

C/W
C/W
C/W

-36-ns

-45-ns

-30-ns

--115ns

©2003 Fairchild Semiconductor Corporation HUF76132SK8 Rev. B1

HUF76132SK8

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charg e Q
Gate Charge at 5V Q
Threshold Gate Ch arg e Q
Gate to Source Gate Charg e Q
Gate to Drai n “M ill er ” C ha r ge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VDD = 15V, ID ≅ 11.5A, RL = 1.3Ω,
V
R
(Figures 16, 2 1, 22)

r

f

VGS = 0V to 5V - 24 29 nC
VGS = 0V to 1V - 1.63 1.95 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 10V,

GS

= 6.8Ω

GS

= 0V to 10V VDD = 15V, ID ≅ 3.3A,

R

= 4.5Ω

L

I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 70 ns

-10-ns

-36-ns

-65-ns

-37-ns

--155ns

-4352nC

-4-nC

-10-nC

- 1560 - pF

-735- pF

-150- pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Vol tage V

Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 11.5A - - 1.25 V

= 3.3A 1.1 V

I

SD

ISD = 3.3A, dISD/dt = 100A/µs--58ns
ISD = 3.3A, dISD/dt = 100A/µs--87nC

12

V

125

= 10V, R

9

6

, DRAIN CURRENT (A)

3

D

I

0

25

V

= 4.5V, R

GS

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

GS

= 189oC/W

θJA

θJA

= 50oC/W

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

©2003 Fairchild Semiconductor Corporation HUF76132SK8 Rev. B1

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

Typical Performance Curves (Continued)

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

1

0.02

0.01

0.1

, NORMALIZED

θJA

Z

THERMAL IMPEDANCE

0.01

SINGLE PUL SE

0.001

-5

10

-4

10

-3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

HUF76132SK8

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

R

= 50oC/W

θJA

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

P

DM

t

1

t

2

1/t2

x R

θJA

1

10

+ T

θJA

A

2

10

10

3

1000

100

VGS = 10V

VGS = 5V

10

, PEAK CURRENT (A)
I

DM

TRANSCONDUCTANCE
MAY LIMIT CURRENT

IN THIS REGION

1

-5

10

-4

10

-3

10

FIGURE 4. PEAK CURRENT CAPABILITY

500

100

10

OPERATION IN THIS
AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

DS(ON)

BVDS

MAX

= 30V

1 10 100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

TJ = MAX RATED

= 25oC

T

A

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

R

θJA

= 50oC/W

TC = 25oC

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

150 - T

I = I

25

-2

10

-1

10

10

0

10

1

10

A

125

2

10

3

t, PULSE WIDTH (s)

100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 25oC

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.1

1 10 100

tAV, TIME IN AVALANCHE (ms)

NO TE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

©2003 Fairchild Semiconductor Corporation HUF76132SK8 Rev. B1