Fairchild Semiconductor HUF76113T3ST Datasheet
Data Sheet June 2003
HUF76113T3ST
4.7A, 30V, 0.031 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
®
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and batteryoperated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF76113T3ST SOT-223 76113
NOTE: HUF76113T3ST is available only in tape and reel.
Features
• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, r
• Temperature Compensating PSPICE
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
DS(ON)
= 0.031Ω
®
Model
Symbol
D
G
Packaging
GATE
DRAIN
SOURCE
SOT-223
DRAIN
(FLANGE)
S
©2003 Fairchild Semiconductor Corporation HUF76113T3ST Rev. B2
HUF76113T3ST
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
A
HUF76113T3ST UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V
30 V
±20 V
Drain Current
Continuous (T
Continuous (TA= 100oC, VGS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
A
Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
J
STG
D
D
D
DM
AS
D
4.7
2.7
2.6
Figure 4
Figure 6
1.1
0.0091
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
A
A
A
W
W/oC
o
C
o
C
o
C
NOTE:
= 25oC to 150oC.
1. T
J
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSSID
DSS
GSS
= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
V
= 25V, VGS = 0V, TC = 150oC--250µA
DS
VGS = ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
GS(TH)VGS
DS(ON)ID
= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 4.7A, VGS = 10V (Figure 9, 10) - 0.027 0.031 Ω
ID = 2.7A, VGS = 5V (Figure 9) - 0.033 0.038 Ω
I
= 2.6A, VGS = 4.5V (Figure 9) - 0.035 0.040 Ω
D
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient R
θJA
Pad Area = 0.173 in2 (Note 2) - - 110
Pad Area = 0.068 in
Pad Area = 0.026 in
2
(See TB377) - - 133
2
(See TB377) - - 157
o
o
o
C/W
C/W
C/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
ON
OFF
VDD = 15V, ID ≅ 2.6A,
R
= 5.8Ω, VGS = 4.5V,
L
R
GS
(Figure 15)
r
f
= 18Ω
--90ns
-12-ns
-46-ns
-31-ns
-31-ns
--95ns
©2003 Fairchild Semiconductor Corporation HUF76113T3ST Rev. B2
HUF76113T3ST
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
NOTES:
2. Rated with R
=110oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds.
θJA
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
ON
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(5)
g(TH)
ISS
OSS
RSS
SD
rr
RR
VDD = 15V, ID ≅ 4.7A,
R
R
(Figure 16)
r
f
VGS = 0V to 5V - 9.5 11.5 nC
VGS = 0V to 1V - 0.73 0.90 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
ISD = 4.7A - - 1.25 V
I
SD
ISD = 2.7A, dISD/dt = 100A/µs--44ns
ISD = 2.7A, dISD/dt = 100A/µs--46nC
= 3.2Ω, VGS = 10V,
L
GS
= 9.1Ω
-4-ns
-21-ns
-31-ns
-25-ns
--85ns
--40ns
= 0V to 10V VDD = 15V, ID ≅
-17.020.5nC
2.7A,
R
= 5.5Ω
L
I
= 1.0mA
g(REF)
(Figure 14)
-1.50- nC
-4.30- nC
-625- pF
-310- pF
-60-pF
= 2.7A - - 1.00 V
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
©2003 Fairchild Semiconductor Corporation HUF76113T3ST Rev. B2
5
V
= 10V, R
4
3
V
= 4.5V, R
GS
2
, DRAIN CURRENT (A)
D
I
1
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
GS
= 110oC/W
θJA
= 110oC/W
θJA
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
HUF76113T3ST
Typical Performance Curves
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
JA
θ
0.01
Z
THERMAL IMPEDANCE
0.001
-5
10
500
100
10
VGS = 10V
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
-5
10
-4
10
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
VGS = 5V
10
(Continued)
SINGLE PULSE
-3
10
-3
10
-2
-1
10
t, RECTANGULAR PULSE DURATION (s)
R
-2
10
-1
10
10
t, PULSE WIDTH (s)
0
10
JA
θ
0
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
= 110oC/W
R
θ
P
DM
1/t2
x R
JA
JA
θ
θ
1
10
10
2
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
1
10
150 - T
125
2
10
= 110oC/W
JA
t
1
t
2
+ T
A
A
3
10
3
10
FIGURE 4. PEAK CURRENT CAPABILITY
200
100
TJ = MAX RATED
TA = 25oC
100µs
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
DS(ON)
V
DSS(MAX)
= 30V
1ms
10ms
1 10 100
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
40
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
10
- VDD)
DSS
DSS
STARTING TJ = 25oC
- VDD) +1]
STARTING TJ = 150oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2003 Fairchild Semiconductor Corporation HUF76113T3ST Rev. B2
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