Fairchild Semiconductor HUF76013D3S, HUF76013P3 Datasheet

Data Sheet December 2001

20A, 20V, 0.022 Ohm, N-Channel, Logic
Level Power MOSFETs

The HUF76013 is an application-specific MOSFET
optimized fo r switching when used as the upper switch in
synchronous bu ck appl ications . The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall sy stem efficiency.

Symbol

D

G

S

Packaging

HUF76013D3S

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

HUF76013P3

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

HUF76013P3, HUF76013D3S

Features

• 20A, 20V

-r

-r

• PWM Optimiz ed for Synchronous Buck Applications

•Fast Switching

• Low Gate Charge

-Q

• Low Capacitance

-C

-C

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76013P3 TO-220AB 76013P
HUF76013D3S TO-252AA 76013D

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76013D3S in tape and reel, e.g., HUF 760 13D3ST.

= 0.022Ω, V

DS(ON)

= 0.030Ω, V

DS(ON)

Total 14nC (Typ)

g

624pF (Typ)

ISS

71pF (Typ)

RSS

GS
GS

= 10V
= 5V

Absolute Maximum Ratings

SYMBOL PARAMETER

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

T

, T

J

STG

T

L

T

pkg

THERMAL SPECIFICATIONS

R

θJC

R

θJA

NOTE:

= 25oC to 125oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Drain to Source Voltage (Note 1) 20 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 20 V
Gate to Source Voltage ±16 V
Drain Current

Continuous (T
Continuous (T
Pulsed Drain Current

Power Dissipation

Derate Above 25
Operating and Storage Temperature -55 to 150
Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

Thermal Resistance Junction to Case, TO-220, TO-252 2.5
Thermal Resistance Junction to Ambient TO-220 62
Thermal Resistance Junction to Ambient TO-252 100

TC = 25oC, Unless Otherwise Specified

= 25oC, VGS = 10V) (Figure 2)

C

= 100oC, VGS = 5V)

C

o

C

HUF76013P3,

HUF76013D3S UNITS

20
20

Figure 4

50

0.4

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

o

C/W

o

C/W

o

C/W

©2001 Fairchild Semiconductor Corpo ration HUF76013P3, HUF76013D3S Rev. B

HUF76013P3, HUF76013D3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source ON Resistance r

SWITCHING SPECIFICATIONS (V

GS

= 5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 10V Q
Total Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

GS(TH)VGS

DS(ON)ID

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS
g(TOT)VGS

g(TH)

ISS
OSS
RSS

VDS = 20V, VGS = 0V - - 1 µA
V

DS

VGS = ±16V - - ±100 nA

I

D

VDD = 10V, ID = 20A
V

GS

(Figures 14, 18, 19)

r

f

VDD = 10V, ID = 20A
V

GS

R

r

f

GS

(Figures 15, 18, 19)

VGS = 0V to 1V - 0.9 1 nC

gs
gd

VDS = 20V, VGS = 0V,
f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 20 - - V

= 20V, VGS = 0V, TC = 150oC - - 250 µA

= VDS, ID = 250µA (Figure 10) 1 - 3 V
= 20A, VGS = 10V (Figures 8, 9) - 0.018 0.022 Ω
= 20A, VGS = 5V (Figure 8) - 0.025 0.030 Ω

- - 197 ns

= 5V, RGS = 19Ω

-11-ns

- 120 - ns

-19-ns

-30-ns

- - 72 ns

- - 151 ns

= 10V,

= 19Ω

-7-ns

-93-ns

-37-ns

-29-ns

- - 100 ns

= 0V to 10V VDD = 10V,

= 20A,

I

= 0V to 5V - 7.8 9 nC

D

I

g(REF)

= 1.0mA

- 14.4 17 nC

(Figures 13, 16, 17)

-3.5-nC

-3.2-nC

- 624 - pF

- 444 - pF

-71-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUF76013P3, HUF76013D3S Rev. B

SD

rr

RR

I

= 20A - - 1.25 V

SD

= 10A - - 1.0 V

I

SD

ISD = 20A, dISD/dt = 100A/µs--55ns
ISD = 20A, dISD/dt = 100A/µs--82nC

Typical Performance Curves

0

0

HUF76013P3, HUF76013D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 15

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

V

= 5.0V

15

GS

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 15

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

x R

0

2

+ T

θJC

V

= 10V

GS

t

1

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

, PEAK CURRENT (A)
I

DM

1000

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

150 - T

I = I

25

10

C

125

0

1

10

FIGURE 4. PEAK CURRENT CAPAB ILITY

©2001 Fairchild Semiconductor Corpo ration HUF76013P3, HUF76013D3S Rev. B