Fairchild Semiconductor HUF76009D3S Datasheet

Data Sheet December 2001

20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs

THE HUF76009 is an application-specific MOSFET optimized fo r switching when used as the upper switch in synchronous bu ck appl ications . The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall sy stem efficiency.

Symbol

D

G

S

Packaging

HUF76009D3S

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

HUFD76009P3

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

HUF76009P3, HUF76009D3S

Features

• 20A, 20V

-r

• PWM optimiz e d for synchronous buck applications

•Fast Switching

• Low Gate Charge

-Q

• Low Capacitance

-C

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76009P3 TO-220AB 76009P HUF76009D3S TO-252AA 76009D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the HUF76009D3S in tape and reel, e.g., HUF 760 09D3ST.

= 0.027Ω, V

DS(ON)

= 0.039Ω, V

DS(ON)

Total 11nC (Typ)

g

470pF (Typ)

ISS

50pF (Typ)

RSS

GS GS

= 10V = 5V

Absolute Maximum Ratings

SYMBOL PARAMETER

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

T

, T

J

STG

T

L

T

pkg

THERMAL SPECIFICATIONS

R

θJC

R

θJA

NOTE:

= 25oC to 125oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Drain to Source Voltage (Note 1) 20 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 20 V Gate to Source Voltage ±16 V Drain Current

Continuous (T Continuous (T Pulsed Drain Current

Power Dissipation

Derate Above 25 Operating and Storage Temperature -55 to 150 Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

Thermal Resistance Junction to Case, TO-220, TO-252 3.04 Thermal Resistance Junction to Ambient TO-220 62 Thermal Resistance Junction to Ambient TO-252 100

TC = 25oC, Unless Otherwise Specified

= 25oC, VGS = 10V) (Figure 2)

C

= 100oC, VGS = 5V)

C

o

C

HUF76009P3,

HUF76009D3S UNITS

20 16

Figure 4

41

0.33

300 260

A A A

W

W/oC

o

C

o

C

o

C

o

C/W

o

C/W

o

C/W

HUF76009P3, HUF76009D3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V Drain to Source On Resistance r

SWITCHING SPECIFICATIONS (V

GS

= 5V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t SWITCHING SPECIFICATIONS (V

GS

= 10V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 10V Q Total Gate Charge at 5V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

DSSID

DSS

VDS = 20V, VGS = 0V - - 1 µA V

GSS

GS(TH)VGS

DS(ON)ID

ON

VGS = ±16V - - ±100 nA

I

D

VDD = 10V, ID = 16A V

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS g(TOT)VGS

g(TH)

ISS OSS RSS

(Figures 14, 18, 19)

r

f

VDD = 10V, ID = 20A V R (Figures 15, 18, 19)

r

f

VGS = 0V to 1V - 0.5 0.6 nC

gs gd

VDS = 20V, VGS = 0V, f = 1MHz (Figure 12)

= 250µA, VGS = 0V (Figure 11) 20 - - V

= 20V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 1 - 3 V = 20A, VGS = 10V (Figures 8, 9) - 0.022 0.027 Ω = 16A, VGS = 5V (Figure 8) - 0.032 0.039 Ω

- - 186 ns

= 5V, RGS = 27Ω,

GS

-9-ns

- 115 - ns

-19-ns

-34-ns

- - 80 ns

- - 150 ns

= 10V,

GS GS

= 27Ω

-5.3-ns

-95-ns

-37-ns

-33-ns

- - 105 ns

= 0V to 10V VDD = 10V,

I

= 16A,

= 0V to 5V - 5.7 6.9 nC

D

= 1.0mA,

I

g(REF)

(Figures 13, 16, 17)

- 10.7 13 nC

-1.7-nC

-2.2-nC

- 470 - pF

- 350 - pF

-50-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t Reverse Recovered Charge Q

SD

rr

RR

ISD = 20A - - 1.25 V

= 10A - - 1.0 V

I

SD

ISD = 16A, dISD/dt = 100A/µs--33ns ISD = 16A, dISD/dt = 100A/µs--30nC

Typical Performance Curves

0

HUF76009P3, HUF76009D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 15

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

V

15

V

= 5V

GS

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 15

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

x R

0

θJC

+ T

GS

t

1

= 10V

t

2

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

10

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

TC = 25oC

FOR TEMPERATURES ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

150 - T

I = I

25

10

C

125

0

1

10

FIGURE 4. PEAK CURRENT CAPAB ILITY

5

3

0

HUF76009P3, HUF76009D3S

Typical Performance Curves

200

100

10

OPERATION IN THIS AREA MAY BE

, DRAIN CURRENT (A)

LIMITED BY r

D

I

SINGLE PULSE

TJ = MAX RATED

1

110

DS(ON)

= 25oC

T

C

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

(Continued)

100µs

1ms

10ms

40

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 15V

V

DD

30

20

, DRAIN CURRENT (A)

10

D

I

TJ = 25oC

50

0

234

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS

40

VGS = 10V

30

20

, DRAIN CURRENT (A)

10

D

I

0

012

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 4.5V

TC = 25oC

VGS = 4V

VGS = 3.5V

VGS = 3V

60

I

= 16A

D

50

ID = 5A

40

30

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

20

DS(ON)

r

10

24681

V

I

D

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 25oC

T

C

= 10A

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 20A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 16 TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 10. NORMALIZED GA TE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

Fairchild Semiconductor HUF76009D3S Datasheet

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