Fairchild Semiconductor HUF75229P3 Datasheet

Data Sheet December 2001

HUF75229P3

44A, 50V, 0.022 Ohm, N-Channel UltraFE T
Power MOSFET

This N-Channel po wer MOSFET is
manufactured using the innovative
UltraFET® process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performanc e. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and pow er management in portable
and battery-operated products.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75229P3 TO-220AB 75229P

NOTE: When ordering use the entire part number.

Features

• 44A, 50V

• Low On-Resistance, r

DS(ON)

= 0.022Ω

• Temperature Compensating PSPICE® Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

For severe environments, see our Automotive HUFA series.

©2001 Fairchild Semiconductor Corpo ration HUF75229P3 Rev. B

HUF75229P3

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

50 V
50 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D

DM

AS

D

44

Figure 5

Figure 6, 14, 15

90

0.6

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 150oC.

J

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

= 250µA, VGS = 0V (Figure 11) 50 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V

VDS = 45V, VGS = 0V - - 1 µA

= 40V, VGS = 0V, TC = 150oC - - 250 µA

V

DS

VGS = ±20V - - ±100 nA

= 44A, VGS = 10V (Figure 9) 0.017 0.020 0.022 Ω

VDD = 30V, ID ≅ 44A,

= 0.68Ω, VGS = 10V,

R

L

= 9.1Ω

R

GS

(Figures 18, 19)

- - 105 ns

-12-ns

-58-ns

-33-ns

-33-ns

- - 100 ns

= 0V to 20V VDD = 30V,

I

≅ 44A,

VGS = 0V to 10V - 35 43 nC
VGS = 0V to 2V - 2.0 2.5 nC

D

= 0.68Ω

R

L

I

g(REF)

= 1.0mA

-6075nC

(Figures 13, 16, 17)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

ISS

OSS

RSS

θJC
θJA

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

(Figure 3) - - 1.66
TO-220 - - 62

- 1060 - pF

- 405 - pF

-95-pF

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t
Reverse Recovered Charge Q

©2001 Fairchild Semiconductor Corpo ration HUF75229P3 Rev. B

RR

ISD = 44A - - 1.25 V
ISD = 44A, dISD/dt = 100A/µs--72ns

rr

ISD = 44A, dISD/dt = 100A/µs - - 120 nC

Typical Performance Curves

5

1

0

1

HUF75229P3

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125 17

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

DS(ON)

BV

MAX = 50V

DSS

1 10 100 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

T

C

= 25oC

100µs

1ms

10ms

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

400

100

, PEAK CURRENT (A)

DM

I

40

-5

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

TC = 25oC

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

JC

θ

0

10

FOR TEMPERATURES
ABOVE 25

+ T

JC

C

θ

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I

=

-2

10

175 - T

I

25

10

C

150

-1

10

10

0

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

©2001 Fairchild Semiconductor Corpo ration HUF75229P3 Rev. B