Fairchild Semiconductor HRF3205 Datasheet

HRF3205, HRF3205S

Data Sheet December 2001

100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switc hi ng r egulators, s w itc hing
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.

Ordering Information

PART NUMBER PACKAGE BRAND

HRF3205 TO-220AB HRF3205
HRF3205S TO-263AB HRF3205S

NOTE: When ordering, use the entir e part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.

Features

• 100A, 55V (See Note)

• Low On-Resistance, r

• Temperature Compensating PSPICE

DS(ON)

= 0.008Ω

®

Model

• Thermal Impedance SPICE Model

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines f or Solde ring Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE
DRAIN

GATE

GATE

SOURCE

DRAIN
(FLANGE)

©2001 Fairchild Semiconductor Corpo ration HRF3205, HRF3205S Rev. B

D

HRF3205, HRF3205S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

TC = 25oC, Unless Othewise Specified

DSS

DGR

GS

55 V
55 V

±20V V

Drain Current

Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D

DM

AS

D

100
390

Figure 10

175

1.17

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

= 25oC to 150oC.

1. T

J

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Breakdown Voltage Temperature

∆V

(BR)DSS

Coefficient
Drain to Source On Resistance r
Turn-On Delay Time t

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Source Inductance L

DSSID

DSS

GSS

∆T

J

r

f

g

gs

gd

ISS
OSS
RSS

S

= 250µA, VGS = 0V 55 - - V

= VDS, ID = 250µA2-4V
VDS = 55V, VGS = 0V - - 25 µA
V

= 44V, VGS = 0V, TC = 150oC - - 250 µA

DS

VGS = ±20V - - 100 nA

/

Reference to 25oC, ID = 250µA - 0.057 - V

= 59A, VGS = 10V (Figure 4) - 0.0065 0.008 Ω

VDD = 28V, ID ≅ 59A,

= 0.47Ω, VGS = 10V,

R

L

= 2.5Ω

R

GS

-14 - ns

- 100 - ns

-43 - ns

-70 - ns

VDD = 44V, ID ≅ 59A,

= 10V, I

V

GS

(Figure 6)

g(REF)

= 3mA

- - 170 nC

- - 32 nC

- - 74 nC

VDS = 25V, VGS = 0V,
f = 1MHz (Figure 5)

- 4000 - pF

- 1300 - pF

- 480 - pF

Measured From the Contact
Screw on Tab to Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From

Modified MOSFET
Symbol Showing the
Internal Devices In­ductances

-7.5 - nH

Package to Center of Die

L

Internal Drain Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

Measured From the Source

D

Lead, 6mm (0.25in) From Head­er to Source Bonding Pad

θJC

R

θJA

TO-220 - - 62

G

TO-263 (PCB Mount, Steady State) - - 40

D

L

S

S

-4.5 - nH

- - 0.85

o
o
o

C/W
C/W
C/W

©2001 Fairchild Semiconductor Corpo ration HRF3205, HRF3205S Rev. B

Source to Drain Diode Specifications

0

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

Pulsed Source to Drain Current (Note 2) I

HRF3205, HRF3205S

SD

SDM

MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode

D

- - 100
(Note 1

A

- - 390 A

G

S

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

RR

ISD = 59A (Note 4) - - 1.3 V
ISD = 59A, dISD/dt = 100A/µs (Note 4) - 110 170 ns

rr

ISD = 59A, dISD/dt = 100A/µs (Note 4) - 450 680 nC

NOTE:

2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)

Typical Performance Curves

1000

V

IN DECENDING ORDER

GS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

100

4.5V

, DRAIN TO SOURCE CURRENT (A)

D

I

10

0.1 1.0 10 10
V

, DRAIN TO SOURCE VOLTAGE (V)

DS

20µs PULSE WIDTH

T

= 25oC

C

FIGURE 1. OUTPUT CHARACTERISTICS FIGURE 2. OUTPUT CHARACTERISTICS

1000

100

, DRAIN TO SOURCE CURRENT (A)

D

I

10

0.1 1 10 100

IN DECENDING ORDER

V

GS

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

20µs PULSE WIDTH

= 175oC

T

C

1000

TJ = 25oC

100

10

, DRAIN TO SOURCE CURRENT(A)

D

I

1

34.567.59

TJ = 175oC

= 25V

V

DS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS, GATE TO SOURCE VOLTAGE (V)

2.5
ID = 98A, VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 3. TRANSFER CHARACTERISTICS FIGURE 4. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corpo ration HRF3205, HRF3205S Rev. B