Fairchild Semiconductor HP4936DY Datasheet

HP4936DY

Data Sheet December 2001

5.8A, 30V, 0.037 Ohm, Dual N-Channel,
Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Ordering Information

PART NUMBER PACKAGE BRAND

HP4936DY SO-8 P4936DY

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4936DYT.

Features

• Logic Level Gate Drive

• 5.8A, 30V

•r

•r

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 0.037 Ω at I

DS(ON)

= 0.055 Ω at I

DS(ON)

Components to PC Boards”

= 5.8A, V

D

= 4.7A, V

D

GS

GS

= 10V

= 4.5V

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

D2(6)
D2(5)

S2(3)

G2(4)

Packaging

SO-8

©2001 Fairchild Semiconductor Corporation HP4936DY Rev. B

±

µ

Ω

Ω

≅

=

θ

HP4936DY

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

A

HP4936DY UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V

30 V

16 V

Drain Current

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (10 µ s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

DM

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

5.8
30

2

0.02

-55 to 150

300
260

W/

A
A

W

o

C

o

C

o

C

o

C

NOTE:

= 25

A

o

1. T

Electrical Specifications

C to 125

o

C.

o

T

= 25

C, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Source Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Total Gate Charge Q

Gate to Source Charge Q

Gate to Drain Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ISS

OSS

RSS

I

= 250 µ A, V

D

V

= V

GS

DS

V

= 30V, V

DS

V

= 30V, V

DS

V

= ± 16V - - 100 nA

GS

I

= 4.7A, V

D

I

= 5.8A, V

D

V

= 15V, I

DD

R

= 15 Ω , V

r

f

g

L

R

= 6 Ω (Figures 12, 13)

GS

V

= 15V, V

DS

(Figures 14, 15)

gs

gd

V

= 25V, V

DS

f = 1MHz
(Figure 4)

Pulse Width <10s (Figure 11)

JA

= 0V 30 - - V

GS

, I

= 250 µ A (Figure 9) 1 - - V

D

= 0V - - 1

GS

= 0V, T

GS

= 4.5V (Figures 6, 8) - 0.042 0.055

GS

= 10V (Figures 6, 8) - 0.030 0.037

GS

1A,

D

10V,

GEN

o

= 55

C--25 µ A

A

-1016ns

-1016ns

-2740ns

-2435ns

= 10V, I

GS

≅

5.8A

D

-1825nC

- 4.5 - nC

- 2.5 - nC

GS

= 0V,

- 625 - pF

- 270 - pF

-50-pF

- - 62.5

o

A

C/W

Device Mounted on FR-4 Material

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t

©2001 Fairchild Semiconductor Corporation HP4936DY Rev. B

I

= 1.7A (Figure 7) - 0.8 1.2 V

SD

I

rr

= 1.7A, dI

SD

/dt = 100A/ µ s - 45 80 ns

SD