Fairchild Semiconductor HP4410DY Datasheet
HP4410DY
Data Sheet December 2001
10A, 30V, 0.0135 Ohm, Single N-Channel,
Logic Level Power MOSFET
This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER PACKAGE BRAND
HP4410DY SO-8 P4410DY
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HP4410DYT.
Features
• Logic Level Gate Drive
• 10A, 30V
•r
•r
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
= 0.0135 Ω at I
DS(ON)
= 0.020 Ω at I
DS(ON)
Components to PC Boards”
= 10A, V
D
= 8A, V
D
GS
= 10V
GS
= 4.5V
Symbol
SOURCE(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
Packaging
SO-8
©2001 Fairchild Semiconductor Corporation HP4410DY Rev. B
±
µ
Ω
Ω
≅
=
θ
HP4410DY
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
A
HP4410DY UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V
30 V
16 V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (10 µ s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
D
DM
D
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
10
50
2.5
0.02
-55 to 150
300
260
W/
A
A
W
o
C
o
C
o
C
o
C
NOTE:
= 25
A
o
C to 125
1. T
Electrical Specifications
o
C.
o
T
= 25
C, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
g(TOT)
ISS
OSS
RSS
I
= 250 µ A, V
D
V
= V
, I
DS
= 30V, V
= 30V, V
= ± 16V - - 100 nA
GS
GS
= 25V, I
= 6 Ω
= 15V, V
= 25V, V
gs
gd
GS
V
DS
V
DS
V
GS
I
= 8A, V
D
I
= 10A, V
D
V
DD
R
= 25 Ω , V
r
f
L
R
GS
V
DS
V
DS
(Figure 4)
Pulse Width < 10s (Figure 11)
JA
= 0V 30 - - V
GS
= 250 µ A (Figure 9) 1 - - V
D
= 0V - - 1
GS
GS
= 0V, T
o
= 55
C--25 µ A
A
= 4.5V (Figures 6, 8) - 0.015 0.020
= 10V (Figures 6, 8) - 0.011 0.0135
D
GEN
1A,
10V,
-1530ns
- 9 20 ns
- 70 100 ns
-2080ns
= 10V, I
GS
≅
10A - 35 60 nC
D
- 7.5 - nC
- 5.8 - nC
= 0V, f = 1MHz
GS
- 1600 - pF
- 685 - pF
- 115 - pF
--50
o
A
C/W
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Reverse Recovery Time t
©2001 Fairchild Semiconductor Corporation HP4410DY Rev. B
I
= 2.3A (Figure 7) - 0.75 1.1 V
SD
I
rr
= 2.3A, dI
SD
/dt = 100A/ µ s - 50 80 ns
SD
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