Fairchild Semiconductor HGTP14N40F3VL Datasheet
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
HGTP14N40F3VL / HGT1S14N40F3VLS
January 2002
General Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are
unique to this automotive application and are intended to
assure device survival in this harsh environment.
Formerly Developmental Type 49023
Package
JEDEC TO-263AB
D² -Pak
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings T
JEDEC TO-220AB
COLLECTOR
(FLANGE)
= 25°C unless otherwise noted
A
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•Max T
• SCIS Energy = 330mJ at T
= 175oC
J
= 25oC
J
Symbol
E
C
G
GATE
R
1
COLLECTOR
EMITTER
Symbol Parameter Ratings Units
BV
BV
E
SCIS25
I
C25
I
C90
V
GES
V
GEM
I
CO
I
CO
P
T
J, TSTG
T
T
CES
CGR
pkg
Collector to Emitter Breakdown Voltage (IC = 1 mA) 420 V
Collector to Gate Breakdown Voltage (R
= 10KΩ) 420 V
GE
Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C 330 mJ
Collector Current Continuous, at TC = 25°C, VGE = 4.5V 38 A
Collector Current Continuous, at TC = 90°C, VGE = 4.5V 35 A
Gate to Emitter Voltage Continuous ±10 V
Gate to Emitter Voltage Pulsed ±12 V
L = 2.3mHy, TC = 25°C 17 A
L = 2.3mHy, TC = 150°C 12 A
Power Dissipation Total TC = 25°C 262 W
D
Power Dissipation Derating T
> 25°C 1.75 W/°C
C
Operating and Storage Junction Temperature Range -40 to 175 °C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
L
Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 6KV
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
14N40FVL HGT1S14N40F3VLT TO-263AB 24mm 24mm 800 units
14N40FVL HG T1S14N40F3VLS TO-263AB Tube N/A 50 units
14N40FVL HGTP14N40F3VL TO-220AB Tube N/A 50 units
HGTP14N40F3VL / HGT1S14N40F3VLS
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
T
= 150°C 345 370 415 V
C
= 25°C 350 375 420 V
T
C
T
= -40°C 355 380 425 V
C
T
= 150°C 350 385 430 V
C
= 150°C - - 250 µA
T
C
BV
BV
CE(CL)
BV
BV
I
CES
I
GES
R
Collector to Emitter Breakdown Voltage IC = 10mA,
CES
Collector to Emitter Clamp Breakdown
Voltage
Emitter to Collector Breakdown Voltage IC = 1mA TC = 25°C24 - - V
ECS
Gate to Emitter Breakdown Voltage I
GES
= 0
V
GE
IC = 10A,
= 0
R
G
= ±1mA ±12 - - V
GES
Collector to Emitter Leakage Current VCE = 250V, TC = 25°C- - 50 µA
Gate to Emitter Leakage Current VGE = ±10V TC = 25°C - - ±10 µA
Series Gate Resistance - 1000 - Ω
1
On State Characteristics
V
CE(SAT)
V
GE(TH)
Collector to Emitter Saturation Voltage IC = 10A,
= 4.5V
V
GE
Gate to Emitter Threshold Voltage IC = 1mA,
= V
V
CE
T
= 25°C- 1.32.0V
C
= 150°C- 1.42.3 V
T
C
TC = 25°C1.0 - 2.0 V
GE
= 150°C0.5 - - V
T
C
Switching Characteristics
t
+
d(OFF)l
t
f(OFF)l
Current T urn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω,
L = 550µHy, V
V
= 5V, TC = 25°C
GE
SCIS Self Clamped Inductive Switching L = 2.3mHy,
V
= 5V , See
GE
Fig. 1 & 2
= 320V,
CL
T
= 25°C17 - - A
C
= 150°C12 - - A
T
C
-1216µs
Thermal Characteristics
R
©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
Thermal Resistance Junction to Case - - 0.57 °C/W
θJC
Typical Performance Curves (Continued)
HGTP14N40F3VL / HGT1S14N40F3VLS
80
60
40
TJ = 150°C
20
, INDUCTIVE SWITCHING CURRENT (A)
SCIS
SCIS Curves valid for V
I
0
RG = 1kΩ, VGE = 5V, VDD = 14V
TJ = 25°C
Voltages of <430V
clamp
100 180
t
, TIME IN CLAMP (µS)
CLP
2001601400 1204020 60 80
Figure 1. Self Clamped Inductive Switching
Current vs Time
1.25
1.20
1.15
1.10
VGE = 8.0V
1.05
1.00
0.95
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
0.90
VGE = 4.5V
VGE = 5.0V
25-25 17512575-50 0 50 100 150
T
, JUNCTION TEMPERATURE (°C)
J
VGE = 4.0V
ICE = 6A
VGE = 3.7V
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
80
60
40
TJ = 25°C
20
TJ = 150°C
, INDUCTIVE SWITCHING CURRENT (A)
SCIS Curves valid for V
SCIS
I
0
0102468
RG = 1kΩ, VGE = 5V, VDD = 14V
Voltages of <430V
clamp
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.45
1.40
1.35
1.30
1.25
1.20
1.15
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
1.10
25-25 17512575-50 0 50 100 150
T
, JUNCTION TEMPERATURE (°C)
J
VGE = 3.7V
VGE = 4.0V
ICE = 10A
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature
40
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
20
10
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = - 40°C
Figure 5. Collector to Emitter Current vs Collecto r
to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002
40
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
20
10
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25°C
Figure 6. Collector to Emitter Current vs
Collector to Emitter On-State Voltage
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