Fairchild Semiconductor HGTP14N36G3VL, HGT1S14N36G3VLS Datasheet
December 2001
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
= 175oC
J
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ig niti on coil driver in automotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition c ircuits. Internal diodes provide ESD pr otection for
the logic level gate. Both a series resistor and a shunt
resister are provi ded in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
Packages
JEDEC TO-220AB
COLLECTOR
(FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
T e rminal Dia gra m
N-CHANNEL ENHANCEMENT MODE
GATE
EMITTER
COLLECTOR
GATE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
R
1
R
2
EMITTER
Absolute Maximum Ratings
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at V
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Inductive Switching Current at L = 2.3mH, T
at L = 2.3mH, T
Collector to Emitter Avalanche Energy at L = 2.3mH, T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . . I
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
C
GEM
TC = +25oC, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS UNITS
CER
= 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . I
GE
= +25oC . . . . . . . . . . . . . . . . . . . . . . . I
C
= + 175oC . . . . . . . . . . . . . . . . . . . . . .I
C
> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC
is limited to 10mA.
= +25oC. . . . . . . . . . . . . . . E
C
ECS
C25
C100
GEM
SCIS
SCIS
AS
D
, T
J
STG
L
390 V
24 V
18 A
14 A
±10 V
17 A
12 A
332 mJ
100 W
-40 to +175
260
o
C
o
C
Specifications HGTP14N36G3VL, HGT1S14N36G3 VL, HGT1S14N36 G3 VLS
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Gate-Emitter Plateau Voltage V
Gate Charge Q
Collector-Emitter Clamp Breakdown
Voltage
Emitter-Collector Breakdown Voltage BV
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
CER
GEP
G(ON)IC
BV
CE(CL)IC
ECS
CER
CE(SAT)IC
LIMITS
UNITSMIN TYP MAX
IC = 10mA,
V
= 0V
GE
= 1kΩ
R
GE
IC = 7A,
V
= 12V
CE
= 7A,
V
= 12V
CE
= 7A
R
= 1000Ω
G
= +175oC 320 355 400 V
T
C
T
= +25oC 330 360 390 V
C
= -40oC 320 350 385 V
T
C
= +25oC-2.7-V
T
C
= +25oC-24-nC
T
C
T
= +175oC 350 380 410 V
C
IC = 10mA TC = +25oC2428-V
VCE = 250V
= 1kΩ
R
GE
= 7A
V
= 4.5V
GE
T
= +25oC-- 25µA
C
T
= +175oC - - 250 µA
C
= +25oC - 1. 25 1.45 V
T
C
T
= +175oC - 1.15 1.6 V
C
Gate-Emitter Threshold Voltage V
GE(TH)IC
Gate Series Resistance R
Gate-Emitter Resistance R
Gate-Emitter Leakage Current I
Gate-Emitter Breakdown Voltage BV
Current Turn-Off Time-Inductive Load t
D(OFF)I
t
F(OFF)I
Inductive Use Test I
Thermal Resistance R
GES
GES
SCIS
θJC
= 14A
I
C
= 5V
V
GE
= 1mA
= V
V
CE
GE
1
2
T
= +25oC-1.62.2V
C
= +175oC-1.72.9V
T
C
TC = +25oC 1.3 1.8 2.2 V
TC = +25oC-75-Ω
TC = +25oC 102030kΩ
VGE = ±10V ±330 ±500 ±1000 µA
I
= ±2mA ±12 ±14 - V
GES
+
IC = 7A, RL = 28Ω
R
= 25Ω, L = 550µH,
G
= 300V, VGE = 5V,
V
CL
T
= +175oC
C
L = 2.3mH,
V
= 5V,
G
= +175oC12--A
T
C
T
= +25oC17--A
C
-7-µs
--1.5oC/W
©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
PULSE DURATIO N = 250µs, DUTY CYCLE <0.5%, V
25
CE
= 10V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
40
10V
20
30
15
20
10
o
+25
+175oC
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
C
-40oC
2 1345
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
VGE, GATE-TO-EMITTER VOLTAGE (V)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
35
30
25
20
15
TC = +175oC
V
V
V
GE
GE
GE
= 5.0V
= 4.5V
= 4.0V
35
VGE = 4.5V
30
25
20
15
3.5V
-40oC
5.0V
4.5V
4.0V
3.0V
2.5V
= +25oC
C
o
+25
+175oC
C
10
5
, COLLECTOR EMITTER CURRENT (A)
CE
I
0
V
, SATURATION VOLTAGE (V)
CE(SAT)
4
53210
FIGURE 3. COLLECTO R-EMI TTER CU RRENT AS A FUNC TION
OF SATURATION VOLTAGE
1.35
1.25
1.15
, SATURATION VOLTAGE (V)
CE(SAT)
V
1.05
-25 +25 +75 +125 +175
TJ, JUNCTION TEMPERATURE (oC)
ICE = 7A
VGE = 4.0V
VGE = 4.5V
VGE = 5.0V
10
5
, COLLECTOR EMITTER CURRENT (A)
CE
I
0
01234 5
V
, SATURATION VOLTAGE (V)
CE(SAT)
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
2.25
ICE = 14A
VGE = 4.0V
2.00
1.75
, SATURATION VOLTAGE (V)
CE(SAT)
V
1.50
-25 +25 +75
TJ, JUNCTION TEMPERATURE (oC)
VGE = 4.5V
VGE = 5.0V
+125
+175
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corpo ration HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
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