Fairchild Semiconductor HGTP12N60C3D Datasheet

HGTP12N60C3D, HGT1S12N60C3DS

Data Sheet December 2001

24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes

This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduc tio n loss of a bipo lar
transistor. The much lower on-state voltage drop vari es onl y
moderately bet ween 2 5

o

C and 150oC. The IGBT used is the
dev elo pm ent type TA491 23. The di ode used in anti-parall el
with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switc hi ng
applications operating at moderate freq uencies where low
conduction losses are essential.

Formerly Developmental Type TA49182.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60C3D TO-220AB 12N60C3D
HGT1S12N60C3DS TO-263AB 12N60C3D

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.

Symbol

C

Features

• 24A, 600V at TC = 25oC

• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns

• Short Circuit Rating

• Low Conduct ion Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

E

C

G

COLLECTOR

(FLANGE)

JEDEC TO-263A

G

E

B

COLLECTOR

(FLANGE)

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corpo ration HGTP12N60C3D, HGT1S12N60C3DS Rev. B

HGTP12N60C3D, HGT1S12N60C3DS

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Average Diode Forward Current at 110

o

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T
Power Dissipation Derating T

= 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

J

(AVG)

, T

C25

C110

CM

GES

GEM

D

STG

L
SC
SC

24 A
12 A
12 A
96 A

±20 V
±30 V

104 W

-40 to 150
260

4 µs

13 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CESIC

CES

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA T

= 250µA, VGE = 0V 600 - - V

VCE = BV

I

C

CES

= I

, VGE = 15V TC = 25oC - 1.65 2.0 V

C110

= 15A, VGE = 15V TC = 25oC - 1.80 2.2 V

= 250µA, VCE = V

TC = 25oC - - 250 µA

= 150oC--2.0mA

T

C

= 150oC - 1.85 2.2 V

T

C

T

= 150oC-2.02.4V

C

GE

3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

= 150oC,

J

= 15V,

V

GE

= 25Ω,

R

G

V

CE(PK)

V

CE(PK)

= 480V 80 - - A
= 600V 24 - - A

L = 100µH

= I

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V

GEPIC

g(ON)IC

ri

fi

ON

OFF

EC

, VCE = 0.5 BV

= I

V

CE

C110

,

C110

= 0.5 BV

CES

CES

VGE = 15V - 48 55 nC
V

= 20V - 62 71 nC

GE

TJ = 150oC,
I

= I

CE

C110,

V

= 0.8 BV

CE(PK)

VGE = 15V,
R

= 25Ω,

G

CES,

L = 100µH

IEC = 12A - 1.7 2.1 V

-7.6- V

-28-ns

-20-ns

- 270 400 ns

- 210 275 ns

- 380 - µJ

- 900 - µJ

©2001 Fairchild Semiconductor Corpo ration HGTP12N60C3D, HGT1S12N60C3DS Rev. B

HGTP12N60C3D, HGT1S12N60C3DS

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Reverse Recovery Time t

Thermal Resistance R

θJC

I

rr

= 12A, dIEC/dt = 200A/µs - 32 40 ns

EC

= 1.0A, dIEC/dt = 200A/µs - 23 30 ns

I

EC

IGBT - - 1.2
Diode - - 1.9

NOTE:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending

OFF

= 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for

CE

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.

Typical Performance Curves

80

DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs

70

60

50

TC = 150oC

40

TC = 25oC

30

TC = -40oC

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

4

= 10V

CE

6 8 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

14

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

80

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

0246810

I

V

= 15.0V

GE

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

12.0V

7.0V

o
o

= 25oC

C

10.0V

C/W
C/W

9.0V

8.5V

8.0V

7.5V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

80

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 10V

GE

TC = -40oC

TC = 150oC

TC = 25oC

80

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TC = -40oC

TC = 25oC

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

©2001 Fairchild Semiconductor Corpo ration HGTP12N60C3D, HGT1S12N60C3DS Rev. B