Fairchild Semiconductor HGTP12N60C3 Datasheet

SEMICONDUCTOR

HGTP12N60C3, HGT1S12N60C3,

HGT1S12N60C3S

January 1997

Features

• 24A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 230ns at T

= 150oC

J

• Short Circuit Rating

• Low Conduction Loss

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60C3 TO-220AB P12N60C3
HGT1S12N60C3 TO-262AA S12N60C3
HGT1S12N60C3S TO-263AB S12N60C3

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A.

Formerly Developmental Type TA49123.

24A, 600V, UFS Series N-Channel IGBTs

Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150oC.

The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, pow er sup­plies and drivers for solenoids, rela ys and contactors .

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

C

G

E

Packaging

JEDEC TO-220AB JEDEC TO-262AA

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

JEDEC TO-263AB

A

M

A

GATE
EMITTER

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

COLLECTOR

(FLANGE)

A

COLLECTOR
(FLANGE)

EMITTER

COLLECTOR

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

3-29

File Number 4040.3

HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP12N60C3, HGT1S12N60C3,

HGT1S12N60C3S UNITS

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

C25

C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T

= 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA 24A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

C

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T

GES

GEM

ARV

, T

J

STG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V

= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t

GE

= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t

GE

CM

D

L
SC
SC

24 A
12 A
96 A

±20 V
±30 V

104 W

100 mJ

-40 to 150
260

4 µs

13 µs

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RGE = 25Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector-Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

Gate-Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 24 30 - V
VCE = BV
V

= BV

CE

= I

C110

VGE = 15V

IC = 250µA,
VCE = V

GE

CES
CES

,

TC = 25oC - - 250 µA
TC = 150oC - - 1.0 mA
TC = 25oC - 1.65 2.0 V
T

= 150oC - 1.85 2.2 V

C

TC = 25oC 3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

= 150oC

J

RG = 25Ω
VGE = 15V

V

CE(PK)

V

CE(PK)

= 480V 80 - - A
= 600V 24 - - A

L = 100µH
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

D(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

D(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

GEP

G(ON)

RI

FI
ON

OFF

θJC

IC = I

IC = I

, VCE = 0.5 BV

C110

,

C110

VCE = 0.5 BV

TJ = 150oC,

ICE = I

C110,

V

= 0.8 BV

CE(PK)

VGE = 15V,

RG = 25Ω,

L = 100µH

CES

- 7.6 - V

VGE = 15V - 48 55 nC

CES

V

= 20V - 62 71 nC

GE

-14-ns

CES,

-16-ns

- 270 400 ns

- 210 275 ns

- 380 - µJ

- 900 - µJ

- - 1.2

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.

o
o

o

C
C

C/W

3-30