Fairchild Semiconductor HGTP12N60B3D Datasheet

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS

Data Sheet December 2001

27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors . These devices ha ve the high inpu t impe dance of
a MOSFET and the low on-s tate con duction lo ss of a bi polar
transistor. The much lower on-state voltage drop varies only
moderately bet ween 2 5

o

C and 150oC. The IGBT used is the
dev elo pm ent type TA49171. The diode used in anti-parall el
with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switchi ng
applications operating at moderate freq ue ncies where low
conduction losses are ess ential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49173.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60B3D TO-220AB 12N60B3D
HGTG12N60B3D TO-247 12N60B3D
HGT1S12N60B3DS TO-263AB 12N60B3D

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.

Symbol

Features

• 27A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

- TB334 “Guidelines f or Solde ring Surface Mount
Components to PC Boards

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR
(FLANGE)

E

C

G

JEDEC TO-263AB

G

E

COLLECTOR
(FLANGE)

= 150oC

J

C

G

E

Fairchild CORPORATION IGBT PRODUCT IS COVE RED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corpo ration HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B

JEDEC STYLE TO-247

E

C

COLLECTOR
(BOTTOM SIDE METAL)

G

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V

J

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

CES

C25

C110

CM

GES

GEM

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

ARV

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC
SC

600 V

27 A
12 A

110 A

±20 V
±30 V

104 W

100 mJ

-55 to 150

300
260

5 µs

10 µs

o

C

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

d(ON)I

rI

d(OFF)I

fI

ON

OFF

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

V

= I

GE

C110

= 15V

CES

,

IC = 250µA, VCE = V

TC = 25oC - - 250 µA
T

= 150oC--2.0mA

C

T

= 25oC-1.62.1V

C

= 150oC-1.72.5V

T

C

GE

4.5 4.9 6.0 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V

J

L = 100µH, V
IC = I

C110

IC = I

C110

= 0.5 BV

V

CE

= 600V

CE

, VCE = 0.5 BV
,

VGE = 15V - 51 60 nC

CES

V

CES

= 20V - 68 78 nC

GE

IGBT and Diode at TJ = 25oC

= I

I

CE

C110

VCE = 0.8 BV

CES

VGE = 15V

= 25Ω

R

G

L = 1mH
Test Circuit (Figure 19)

96 - - A

-7.3- V

-26- ns

-23- ns

- 150 - ns

-62- ns

- 304 350 µJ

- 250 350 µJ

IGBT and Diode at TJ = 150oC

= I

I

CE

C110

VCE = 0.8 BV

CES

VGE = 15V

= 25Ω

R

G

L = 1mH
Test Circuit (Figure 19)

-22- ns

-23- ns

- 280 295 ns

- 112 175 ns

- 500 525 µJ

- 660 800 µJ

©2001 Fairchild Semiconductor Corpo ration HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

EC

rr

θJC

IEC = 12A - 1.7 2.1 V
IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns

= 1.0A, dIEC/dt = 200A/µs - 23 30 ns

I

EC

IGBT - - 1.2
Diode - - 1.9

NOTE:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Tur n-Off Switching L oss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves

30

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

= 15V

V

GE

100

TJ = 150oC, RG = 25Ω, V

90
80
70
60
50
40
30
20
10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

0

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 100µH

GE

300 400200100 500 600

o
o

C/W
C/W

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

TEMPERATURE

300

TJ = 150oC, RG = 25Ω, L = 1mH, V

100

10

f

= 0.05 / (t

MAX1

= (PD - PC) / (EON + E

f

MAX2

P

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

f

C

(DUTY FACTOR = 50%)
R

MAX

= 1.2oC/W, SEE NOTES

θJC

1

2

3

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

d(OFF)I

+ t

d(ON)I

OFF

= 480V

CE

)

)

T

C

75
75

110
110oC

V

GE

o

15V

C

o

10V

C

o

15V

C

10V

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

3010 20

16

14 90

12

10

8

6

4

, SHORT CIRCUIT WITHSTAND TIME (µs)

2

SC

t

VCE = 360V, RG = 25Ω, TJ = 125oC

I

SC

t

SC

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

100

80

70

60

50

40

30

EMITTER CURRENT

©2001 Fairchild Semiconductor Corpo ration HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I