Fairchild Semiconductor HGTP12N60A4D, HGTG12N60A4D, HGT1S12N60A4DS Datasheet

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFE T s and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately betw een 25

C and 150oC. The IGBT used is the devel opm ent type TA49 335 . The diod e used in anti-par al lel is the development type TA49371.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are es sential. Thi s device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49337.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG12N60A4D TO-247 12N60A4D HGTP12N60A4D TO-220AB 12N60A4D HGT1S12N60A4DS TO-263AB 12N60A4D

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A.

Symbol

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

= 125oC

• Low Conduct ion Loss

• Temperature Compensating SABER™ Model www.fairchildsermi.com

• Related Literature

- TB334 “Guidelines f or Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

JEDEC STYLE TO-247

Fairchild CORPORATION IGBT PRODUCT IS COVE RED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T Pow er Dissi pation Total at T

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

GES

GEM

, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

54 A 23 A 96 A

±20 V ±30 V

167 W

-55 to 150

300 260

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E Current Turn-On Delay Time t Current Rise Time t Current Turn-Off Delay Time t Current Fall Time t Turn-On Energy (Note3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

d(OFF)I

fI ON1 ON2 OFF

d(ON)I

d(OFF)I

fI ON1 ON2 OFF

IC = 250µA, VGE = 0V 600 - - V VCE = 600V TJ = 25oC - - 250 µA

= 125oC--2.0mA

= 12A,

= 15V

= 25oC-2.02.7V

= 125oC-1.62.0V

IC = 250µA, VCE = 600V - 5.6 - V VGE = ±20V - - ±250 nA

= 150oC, RG = 10Ω, VGE = 15V,

L = 100µH, V

= 600V

60 - - A

IC = 12A, VCE = 300V - 8 - V IC = 12A,

= 300V

IGBT and Diode at TJ = 25oC,

= 12A,

= 390V,

= 15V,

= 10Ω,

L = 500µH, Test Circuit (Figure 24)

= 15V - 78 96 nC

= 20V - 97 120 nC

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

IGBT and Diode at TJ = 125oC,

= 12A,

= 390V, VGE = 15V,

= 10Ω,

L = 500µH, Test Circuit (Figure 24)

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

θJC

IEC = 12A - 2.2 - V IEC = 12A, dIEC/dt = 200A/µs-30-ns I

= 1A, dIEC/dt = 200A/µs-18-ns

IGBT - - 0.75 Diode - - 2.0

NOTES:

2. Turn-Off Energy Loss (E at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Tur n-Off Switching L oss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss co nditions ar e shown for the convenience o f the circu it designer. E is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T Figure 24.

Typical Performance Curves

Unless Otherwise Specified

= 15V,

TJ = 150oC, RG = 10Ω, V

C/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specifi ed in

= 15V, L = 200µH

ON2

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

100

= 0.05 / (t

MAX1

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

= 0.75oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

TJ = 125oC, RG = 10Ω, L = 500µH, V

MAX

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

+ t

)

d(ON)I

+ E

OFF

)

= 390V

ON2

TCV

10 20

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

15V

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 390V, RG = 10Ω, TJ = 125oC

18 16 14 12 10

8 6 4 2

, SHORT CIRCUIT WITHSTAND TIME (µs)

9 101112 15

VGE, GATE TO EMITTER VOL TAGE (V)

13 14

300 275 250 225 200 175 150 125 100 75

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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