Fairchild Semiconductor FZT649 Datasheet
FZT649
Discrete Power & Signal
Technologies
July 1998
FZT649
C
E
C
B
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A = 25°C unless otherwise noted
FZT649
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
A = 25°C unless otherwise noted
Max
Characteristic
FZT649
Units
V25Collector-Emitter Voltage
V35Collector-Base Voltage
V5Emitter-Base Voltage
A3Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W2Total Device Dissipation
°C/W62.5Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
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ON
CHARACTERISTICS
*
NPN Low Saturation Transistor
FZT649
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
IC = 50 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 6 A, VCE = 2 V
IC = 1 A, IB = 100 mA
IC = 3 A, IB = 300 mA
70
100
75
15
100
10
100
300
600
UnitsMaxMinTest ConditionsParameterSymbol
V25
V35
V5
nA
uA
nA
-
mV300
V
BE(sat)
V
BE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
C
obo
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Output Capacitance
Transition Frequency
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 2 V
VCB = 10 V, IE = 0, f = 1MHz
IC = 100 mA,VCE = 5 V, f=100MHz
V1.25
V1
pF50
- 150
1998 Fairchild Semiconductor Corporation
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fzt649.lwpPrNC 7/10/98 revB
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