Fairchild Semiconductor FYV0203DS, FYV0203DP, FYV0203DN, FYV0203S Datasheet
FYV0203S/DN/DP/DS
FYV0203S/DN/DP/DS
3
Y
3
B
1
Connection Diagram
3
3
1
1
2 FY V0203DN
1
SOT-23
2
1
Marking
FYV0203S = YB1 FYV0203DP = YB3
FYV0203DN = YB2 FYV0203DS = YB4
2
1
1
FYV0203S
3
Schottky Diode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
Maximum Repetitive Reverse Voltage 30 V
Average Rectified Forward Current 0.2 A
Non-repetitive Peak Surge Current
Pulse Width = 1.0s
T
STG
T
J
Storage Temperature Range -65 to +150 °C
Operating Junction Temperature 150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJA
Thermal Resistance, Junction to Ambient 430 °C/W
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
F
*
I
R
*
C
T
t
rr
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Forward Voltage Drop
I
I
I
I
I
I
Reverse Current
@ Rated V
Total Capacitance
= 1V , f = 1.0 MHz - - 10
V
R
Reverse Recovery Time
= IR = 10mA, I
I
F
TA=25°°°°C unless otherwise noted
TA=25°°°°C unless otherwise noted
= 0.1mA
F
= 1mA
F
= 10mA
F
= 30mA
F
= 100mA
F
= 200mA
F
R
RR
TA = 25 °C
T
= 125 °C
A
= 1mA, RL = 100Ω --5
0.6 A
-
-
-
-
-
-
-
-
210
270
340
390
485
600
0.2
130
240
320
400
500
800
1000
2
-
2 FYV0203DP
3
2 FYV 0203DS
mV
uA
pF
ns
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
Typical Characteristics
FYV0203S/DN/DP/DS
0.1
[A]
F
0.01
TJ=125 oC
0.001
Forward Current, I
0.0001
0.0 0.2 0.4 0.6 0.8 1.0
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Figure 1. Typical Forward Volta ge C haracteristics
12
11
10
[pF]
T
9
8
7
6
5
4
3
2
Total Diode Capacitance, C
1
012345678910
Reverse Voltage, VR[V]
TJ=25 oC
1000
100
]
㎂
[
R
10
1
Reverse Current, I
0.1
0.01
0102030
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 3. Total Diode Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
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