Fairchild Semiconductor FYPF2004DN Datasheet

FYPF2004DN

Features

• Low forward voltage drop

• High frequency properties and switching speed

• Guard ring for over-voltage protection

FYPF2004DN

Applications

• Switched mode power supply

• Freewheeling diodes

1 2 3

TO-220F

1. Anode 2.Cathode 3. Anode

SCHOTTKY BARRIER RECTIFIER

Absolute Maximum Ratings

Symbol Parameter Value Units

V

RRM

V

R

I

F(AV)

I

FSM

T

J, TSTG

Maximum Repetitive Reverse Voltage 40 V
Maximum DC Reverse Voltage 40 V
Maximum Average Rectified Current @ TC = 115°C20 A
Maximum Forward Surge Current (per diode)

60Hz Single Half-Sine Wave

Operating Junction and Storage Temperature -40 to +150

Thermal Characteristics

Symbol Parameter Value Units

R

θ

JC

Maximum Thermal Resistance, Junction to Case (per diode) 3.5

Electrical Characteristics

Symbol Parameter Value Units

V

FM

*

I

RM

*

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maximum Instantaneous Forward Voltage

I
I
I
I

Maximum Instantaneous Reverse Current

@ rated V

= 10A

F

= 10A

F

= 20A

F

= 20A

F

TC=25

C unless otherwise note d

°°°°

(per diode)

TC = 25 °C

R

T

= 25 °C

C

T

= 125 °C

C

= 25 °C

T

C

= 125 °C

T

C

= 125 °C

T

C

150 A

0.55

0.49

0.67

0.65

1

80

°

C/W

mA

°

C

V

©2000 Fairchild Semiconductor International Rev. A, July 2000

Typical Characteristics

FYPF2004DN

100

[A]

10

F

1

Forward C u rre nt, I

0.1

0.01

0.0 0.5 1.0 1.5

TJ=125 oC

TJ=75 oC

TJ=25 oC

Forward Voltage Drop, VF[V]

Figure 1. Typical Forward Volta ge C haracteristics

(per diode)

1000

900
800

[pF]

700

J

600
500

400

300

TJ=25 oC

100

10

[mA]

R

1

0.1

Reverse Current, I

0.01

0.001
0 10203040

TJ=150 oC
TJ=125 oC

TJ=75 oC

TJ=25 oC

Reverse Voltage, VR[V]

Figure 2. Typical Reverse Current

vs. Reverse Voltage (p er diode)

10

C/W]

o

1

200

Junction Capacitance, C

0 10203040

Reverse Voltage, VR[V]

Figure 3. Typical Junction Capacitance

(per diode)

25

[A]

20

F(AV)

15

10

5

Average Forward Current, I

0

0 20406080100120140160

Case Temperature, TC[oC]

DC

Figure 5. Forward Current Derating Curve

Transient Thermal Impedance [

0.1
100µ 1m 10m 100m 1 10

Pulse Duration [s]

Figure 4. Thermal Impedance Characte rist ics

(per diode)

180

160

[A]

FSM

140

120

100

80

60

40

20

Max. Forward Su rge Cu rren t, I

0

1 10 100

Number of Cycles @ 60Hz

Figure 6. Non-Repetive Sureg Current

(per diode)

©2000 Fairchild Semiconductor International

Rev. A, July 2000