Fairchild Semiconductor FYPF1004DN Datasheet
FYPF1004DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
FYPF1004DN
Applications
• Switched mode power supply
• Freewheeling diodes
1 2 3
TO-220F
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 40 V
Maximum DC Reverse Voltage 40 V
Maximum Average Rectified Current @ TC = 130°C10 A
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -40 to +150
Thermal Characteristics
Symbol Parameter Value Units
R
θ
JC
Maximum Thermal Resistance, Junction to Case (per diode) 4.5
Electrical Characteristics
Symbol Parameter Value Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
I
I
I
Maximum Instantaneous Reverse Current
@ rated V
TC=25
(per diode) TC=25
= 5A
F
= 5A
F
= 10A
F
= 10A
F
TC = 25 °C
R
C unless otherwise note d
°°°°
C unless otherwise noted
°°°°
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
C
80 A
0.55
0.49
0.67
0.65
1
40
°
C/W
mA
°
C
V
©2000 Fairchild Semiconductor International Rev. A, July 2000
Typical Characteristics
FYPF1004DN
10
[A]
F
1
TJ=125 oC
Forward C u rre nt, I
0.1
0.01
0.0 0.5 1.0 1.5
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Figure 1. Typical Forward Volta ge C haracteristics
(per diode)
700
600
500
[pF]
400
J
300
200
TJ=25 oC
100
10
[mA]
R
1
0.1
0.01
Reverse Current, I
0.001
0 10203040
TJ=150 oC
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (p er diode)
10
C/W]
o
1
Junction Capacitance, C
100
90
80
0 10203040
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
12
[A]
10
F(AV)
8
6
4
2
Average Forward Current, I
0
0 20406080100120140160
Case Temperature, TC[oC]
DC
Figure 5. Forward Current Derating Curve
Transient Thermal Impedance [
100µ 1m 10m 100m 1 10
Pulse Duration [s]
Figure 4. Thermal Impedance Characte rist ics
(per diode)
100
[A]
80
FSM
60
40
20
Max. Forward Su rge Cu rren t, I
0
1 10 100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Sureg Current
(per diode)
©2000 Fairchild Semiconductor International
Rev. A, July 2000
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