Fairchild Semiconductor FYP2006DN Datasheet
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
FYP2006DN
FYP2006DN
Applications
• Switched mode power supply
• Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 60 V
Maximum DC Reverse Voltage 60 V
Average Rectified Forward Current @ TC = 134°C20 A
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.7 °C/W
Electrical Characteristics
Symbol Parameter Value Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
= 10A
I
F
I
= 10A
F
= 20A
I
F
= 20A
I
F
@ rated V
=25°°°°C unless otherwise noted
C
(per diode)
TC = 25 °C
R
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
C
200 A
0.58
0.52
0.71
0.65
1
50
V
mA
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
Typical Characteristics
FYP2006DN
100
[A]
F
10
1
TJ=125 oC
Forward C u rre nt, I
0.1
0.01
0.0 0.5 1.0 1.5 2.0
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Figure 1. Typical Forward Volta ge C haracteristics
(per diode)
1000
[pF]
J
TJ=25 oC
100
10
[mA]
R
1
0.1
Reverse Current, I
0.01
0.001
0204060
TJ=150 oC
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (p er diode)
10
C/W]
o
1
Junction Capacitance, C
100
0 204060
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
25
[A]
20
F(AV)
15
10
Square Wave
5
Duty Cycle=0.5
Average Forward Current, I
0
0 20406080100120140160
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
Transient Thermal Impedance [
100µ 1m 10m 100m 1 10
Pulse Duration [s]
Figure 4. Thermal Impedance Characte rist ics
(per diode)
250
[A]
200
FSM
150
100
50
Max. Forward Surge Current, I
0
1 10 100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Sureg Current
(per diode)
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
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