Fairchild Semiconductor FSBCW30 Datasheet
FSBCW30
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
FSBCW30
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitt er Voltage 32 V
Collector-Base Voltage 32 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FSBCW30
P
D
R
θ
JA
*Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 250
2
of 2oz copper.
500
4
mW
mW/°C
°C/W
1998 Fairchild Semiconductor Corporation
FSBCW30, Rev B
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
CES
BV
EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
NF Noise Figure
Co llec tor-Emitter Brea k do w n
Voltage
Collector-Base Breakdown Voltage
Co llec tor-Emitter Brea k do w n
Voltage
Em itter-Base Breakdown Voltage
Collector-Cutoff Current VCB = 32 V, IE = 0
IC = 2.0 mA, IB = 0 32 V
= 10 µA, IE = 0
I
C
= 10 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
= 32 V, IE = 0, TA = +100
V
CB
°
C
32 V
32 V
5.0 V
DC Current Gain VCE = 5.0 V, IC = 2.0 mA 215 500
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.30 V
)
Base-Emitt er On Vol tage VCE = 5.0 V, IC = 2.0 mA 0.60 0.75 V
= 5.0 V, IC = 200 µA,
V
CE
= 2.0 kΩ, f = 1.0 kHz,
R
S
= 200 Hz
B
W
100
10
10 dB
nA
µ
FSBCW30
A
FSBCW30, Rev B
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