Fairchild Semiconductor FSB6726 Datasheet
FSB6726
FSB6726
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0 A. Sourced from Process 77.
Absolute Maximum Ratings* T
V
V
V
I
C
T
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
P
R
CEO
CBO
EBO
J, Tstg
Symbol
D
θJA
A = 25°C unless otherwise noted
ParameterSymbol
FSB660/FSB660A
Units
V30Collector-Emitter Voltage
V40Collector-Base Voltage
V5Emitter-Base Voltage
A1.5Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
A = 25°C unless otherwise noted
Max
Characteristic
Units
FSB6726
mW500Total Device Dissipation
°C/W250Thermal Resistance, Junction to Ambient
1999 Fairchild Semiconductor Corporation
Page 1 of 2
fsb6726lwp Pr77 RevA
ON
CHARACTERISTICS
*
PNP General Purpose Amplifier
FSB6726
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
C
cb
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small Signal Current Gainhfe
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 40 V
VEB = 5V
IC = 100 mA, VCE = 1 V
IC = 1 A, VCE = 1V
IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 1 V
VCB = 10 V, f = 1MHz
IC= 50 mA,VCE = 10V, f=20MHz
60
50
100
100
250
UnitsMaxMinTest ConditionsParameterSymbol
V30
V40
V5
nA
nA
-
-
mV500
V1.2
pF30
-25 2.5
Page 2 of 2
fsb6726lwp Pr77 RevA
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