Fairchild Semiconductor FSB649 Datasheet

FSB649

FSB649

C

E
B

SuperSOT

TM

-3

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A

continuous. Sourced from Process NC.

Absolute Maximum Ratings* T

ParameterSymbol

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Symbol

P

D

R

θJA

Characteristic

A = 25°C unless otherwise noted

A = 25°C unless otherwise noted

FSB649

Max

FSB649

Units

Units

°C/W250Thermal Resistance, Junction to Ambient

V25Collector-Emitter Voltage
V35Collector-Base Voltage

V5Emitter-Base Voltage
A3Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

mW500Total Device Dissipation

 1999 Fairchild Semiconductor Corporation

fsb649.lwpPrNC revA

SMALL SIGNAL CHARACTERISTICS

ON

CHARACTERISTICS

OFF CHARACTERISTICS

NPN Low Saturation Transistor

FSB649

(continued)

Electrical Characteristics T

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

CEO

CBO

EBO

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current

Emitter Cutoff Current

*

DC Current Gain

Collector-Emitter Saturation Voltage

A = 25°C unless otherwise noted

= 10 mA

I

C

= 100 µA

I

C

= 100 µA

I

E

V

CB

V

CB

V

EB

= 50 mA, VCE = 2 V

I

C

I

= 1 A, VCE = 2 V

C

I

= 2 A, VCE = 2 V

C

I

= 6 A, VCE = 2 V

C

= 1 A, IB = 100 mA

I

C

I

= 3 A, IB = 300 mA

C

= 30 V
= 30 V, TA=100°C

= 4V

70

100

75
15

100

10

100

300

600

UnitsMaxMinTest ConditionsParameterSymbol

V25
V35
V5

nA
uA

nA

-

mV300

V

BE(sat)

V

BE(on)

C

obo

f

T

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Base-Emitter Saturation Voltage
Base-Emitter On Voltage

Output Capacitance
Transition Frequency

I

= 1 A, IB = 100 mA

C

= 1 A, VCE = 2 V

I

C

= 10 V, IE = 0, f = 1MHz

V

CB

= 100 mA,VCE = 5 V, f=100MHz

I

C

V1.25
V1

pF50

- 150

 1999 Fairchild Semiconductor Corporation

fsb649.lwpPrNC revA