Fairchild Semiconductor FSB619 Datasheet
FSB619
Discrete Power & Signal
Technologies
July 1998
FSB619
C
E
B
SuperSOTTM-3 (SOT-23)
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A = 25°C unless otherwise noted
FSB619
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
Total Device Dissipation*
Derate above 25°C
A = 25°C unless otherwise noted
Max
Characteristic
FSB619
500
4
Units
V50Collector-Emitter Voltage
V50Collector-Base Voltage
V5Emitter-Base Voltage
A2Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
mW
mW/°C
°C/W250Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
Page 1 of 2
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
SMALL SIGNAL CHARACTERISTICS
ON
CHARACTERISTICS
OFF CHARACTERISTICS
FSB619
NPN Low Saturation Transistor
(continued)
Electrical Characteristics T
BV
BV
BV
I
CBO
I
EBO
I
CES
h
FE
V
CE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
*
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 40 V
VEB = 4V
V
CES
IC = 10 mA, VCE = 2V
IC = 200 mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 100 mA, IB = 10 mA
IC = 1 A, IB = 10 mA
IC = 2 A, IB = 50 mA
= 40 V
300
200
100
100
100
100
235
320
UnitsMaxMinTest ConditionsParameterSymbol
V50
V50
V5
nA
nA
nA
-200
mV20
V
BE(sat)
V
BE(on)
C
obo
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
IC = 2 A, IB = 50 mA
IC = 2 A, VCE = 2 V
VCB = 10 V, IE = 0, f = 1MHz
IC = 50 mA,VCE = 10 V, f=100MHz
V1
V1
pF30
- 100
Page 2 of 2
fsb619.lwpPrNA 7/10/98 revC
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