Fairchild Semiconductor FSAM20SL60 Datasheet

FSAM20SL60

SPMTM (Smart Power Module)

General Description

FSAM20SL60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly
targeting low speed low-power inverter-driven application
like air conditioners. It combines optimized circuit protection
and drive matched to low-loss IGBTs. Highly effective
short-circuit current detection/protection is realized through
the use of advanced current sensing IGBT chips that allow
continuous monitoring of the IGBTs current. System
reliability is further enhanced by the built-in over­temperature monitoring and integrated under-voltage lock­out protection. The high speed built-in HVIC provides opto­coupler-less IGBT gate driving capability that further reduce
the overall size of the inverter system design. In addition the
incorporated HVIC facilitates the use of single-supply drive
topology enabling the FSAM20SL60 to be driven by only
one drive supply voltage without negative bias. Inverter
current sensing application can be achieved due to the
divided negative dc terminals.

FSAM20SL60

Features

• UL Certified No. E209204

• 600V-20A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection

• Divided negative dc-link terminals for inverter current
sensing applications

• Single-grounded power supply due to built-in HVIC

• Typical switching frequency of 3kHz

• Built-in thermistor for over-temperature monitoring

• Inverter power rating of 1.5kW / 100~253 Vac

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

• Adjustable current protection level by varying series
resistor value with sense-IGBTs

Applications

• AC 100V ~ 253V 3-phase inverter drive for small power
(1.5kW) ac motor drives

• Home appliances applications requiring low switching
frequency operation like air conditioners drive system

• Application ratings:

- Power : 1.5kW / 100~253 Vac

- Switching frequency : Typical 3kHz (PWM Control)

- 100% load current : 8A (Irms)

- 150% load current : 12A (Irms) for 1 minute

External View

60mm

31mm

©2003 Fairchild Semiconductor Corporation

Top View Bottom View

Fig. 1.

Rev. D, August 2003

Integrated Power Functions

• 600V-20A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

• For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection

• Temperature Monitoring: System over-temperature monitoring using built-in thermistor

• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 14and 15.

Control supply circuit under-voltage (UV) protection

Note) Available temperature monitoring circuit is given in Fig. 15.

Pin Configuration

Top View

(1) V

(1) V

(1) V

CC(L)

CC(L)

CC(L)

(2) com

(2) com

(2) com
(3) IN

(3) IN

(3) IN

(UL)

(UL)

(UL)

(4) IN

(4) IN

(4) IN

(VL)

(VL)

(VL)

(5) IN

(5) IN

(5) IN

(WL)

(WL)

(WL)

(6) com

(6) com

(6) com
(7) FO

(7) FO

(7) FO
(8) C

(8) C

(8) C

FOD

FOD

FOD

(9) C

(9) C

(9) C

SC

SC

SC

(10) R

(10) R

(10) R

SC

SC

SC

(11) IN

(11) IN

(11) IN
(12) V

(12) V

(12) V

CC(UH)

CC(UH)

CC(UH)

(13) V

(13) V

(13) V

B(U)

B(U)

B(U)

(14) V

(14) V

(14) V

S(U)

S(U)

S(U)

(15) IN

(15) IN

(15) IN
(16) com

(16) com

(16) com
(17) V

(17) V

(17) V

CC(VH)

CC(VH)

CC(VH)

(18) V

(18) V

(18) V

B(V)

B(V)

B(V)

(19) V

(19) V

(19) V

S(V)

S(V)

S(V)

(20) IN

(20) IN

(20) IN
(21) V

(21) V

(21) V

CC(WH)

CC(WH)

CC(WH)

(22) V

(22) V

(22) V

B(W)

B(W)

B(W)

(23) V

(23) V

(23) V

S(W)

S(W)

S(W)

(L)

(L)

(L)

(L)

(L)

(L)

(UH)

(UH)

(UH)

(VH)

(VH)

(VH)

(WH)

(WH)

(WH)

(H)

(H)

(H)

(24) V

(24) V

(24) V
(25) R

(25) R

(25) R

(26) N

(26) N

(26) N

(27) N

(27) N

(27) N

(28) N

(28) N

(28) N

(29) U

(29) U

(29) U

(30) V

(30) V

(30) V

(31) W

(31) W

(31) W

(32) P

(32) P

(32) P

TH

TH

TH

TH

TH

TH

U

U

U

V

V

V

W

W

W

Case Temperature (TC)

Case Temperature (TC)
Detecting Point

Detecting Point

Ceramic Substrate

Ceramic Substrate

FSAM20SL60

©2003 Fairchild Semiconductor Corporation

Fig. 2.

Rev. D, August 2003

Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

2COM

3IN

4IN

5IN

(UL)

(VL)

(WL)

6COM

7V

8C

9C

10 R

11 IN

12 V

13 V

14 V

15 IN

FO

FOD

SC

SC

(UH)

CC(UH)

B(U)

S(U)

(VH)

16 COM

17 V

18 V

19 V

20 IN

21 V

22 V

23 V

24 V

25 R

26 N

27 N

28 N

CC(VH)

B(V)

S(V)

(WH)

CC(WH)

B(W)

S(W)

TH

TH

U

V

W

29 U Output for U Phase

30 V Output for V Phase

31 W Output for W Phase

32 P Positive DC–Link Input

Low-side Common Bias Voltage for IC and IGBTs Driving

Low-side Common Supply Ground

(L)

Signal Input for Low-side U Phase

Signal Input for Low-side V Phase

Signal Input for Low-side W Phase

Low-side Common Supply Ground

(L)

Fault Output

Capacitor for Fault Output Duration Time Selection

Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input

Resistor for Short-Circuit Current Detection

Signal Input for High-side U Phase

High-side Bias Voltage for U Phase IC

High-side Bias Voltage for U Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

Signal Input for High-side V Phase

High-side Common Supply Ground

(H)

High-side Bias Voltage for V Phase IC

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

Signal Input for High-side W Phase

High-side Bias Voltage for W Phase IC

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for W Phase IGBT Driving

Thermistor Bias Voltage

Series Resistor for the Use of Thermistor (Temperature Detection)

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

Negative DC–Link Input for W Phase

FSAM20SL60

©2003 Fairchild Semiconductor Corporation

Rev. D, August 2003

Internal Equivalent Circuit and Input/Output Pins

Bottom View

FSAM20SL60

(22) V

B(W)

(21) V

CC(WH)

(20) IN

(W H)

(23) V

S(W)

(18) V

B(V)

(17) V

CC(VH)

(16) C OM

(15) IN

(VH)

(19) V

S(V)

(13) V

B(U)

(12) V

CC(UH)

(11) IN

(UH)

(14) V

S(U)

(10) R

SC

(9) C

SC

(8) C

FOD

(7) V

FO

(6) CO M

(5) IN

(W L)

(4) IN

(VL)

(3) IN

(UL)

(2) CO M

(1) V

CC(L)

VB

VCC

COM

IN

OUT

VS

(32) P

(31) W

VB

VCC

(H)

COM

IN

OUT

VS

(30) V

VB

VCC

OUT

COM

IN

C(SC)

C(FOD)

VFO

(L)

IN(W L )

IN(VL )

IN(UL)

(L)

COM(L)

VS

OUT(W L)

OUT(VL)

OUT(UL)

(29) U

(28) N

(27) N

W

V

VCC

(26) N

U

(25) R

THERMISTOR

(24) V

TH

TH

Note:

1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and
protection functions.

2) Inverter power side is composed of four inverter dc-link input pins and three inverter output pins.

3) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

Fig. 3.

©2003 Fairchild Semiconductor Corporation

Rev. D, August 2003

FSAM20SL60

Absolute Maximum Ratings (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Item Symbol Condition Rating Unit

Supply Voltage V

Supply Voltage (Surge) V

PN(Surge)

Collector-Emitter Voltage V

Each IGBT Collector Current ± I

Each IGBT Collector Current ± I

Each IGBT Collector Current (Peak) ± I

PN

CES

CP

Applied between P- NU, NV, N

Applied between P- NU, NV, N

TC = 25°C 20 A

C

TC = 100°C 14 A

C

W

W

TC = 25°C,

450 V

500 V

600 V

40 A

Instantaneous Value (Pulse)

Collector Dissipation P

Operating Junction Temperature T

Note:

1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.

TC = 25°C per One Chip 58 W

C

(Note 1) -20 ~ 125 °C

J

Control Part

Item Symbol Condition Rating Unit

Control Supply Voltage V

High-side Control Bias Voltage V

Input Signal Voltage V

Fault Output Supply Voltage V

Fault Output Current I

Current Sensing Input Voltage V

Applied between V

CC

BS

IN

FO

FO

SC

- COM

V

CC(L)

(L)

Applied between V
V

S(W)

Applied between IN
IN

, IN

(VL)

, IN

(WL)

(UL)

Applied between VFO - COM

Sink Current at VFO Pin 5 mA

Applied between CSC - COM

CC(UH)

- V

B(U)

(UH)

- COM

, IN

, V

S(U)

CC(VH)

, V

(VH)

(L)

(L)

(L)

, IN

B(V)

, V

(WH)

CC(WH)

- V

S(V)

- COM

- COM

, V

B(W)

(H)

,

(H)

-

-0.3~VCC+0.3 V

-0.3~VCC+0.3 V

-0.3~VCC+0.3 V

20 V

20 V

Total System

Item Symbol Condition Rating Unit

Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)

Module Case Operation Temperature T

Storage Temperature T

Isolation Voltage V

V

PN(PROT)VCC

= VBS = 13.5 ~ 16.5V

= 25°C, Non-repetitive, less than 6µs

T

J

Note Fig.2 -20 ~ 100 °C

C

STG

60Hz, Sinusoidal, AC 1 minute, Connection

ISO

Pins to Heat-sink Plate

-20 ~ 125 °C

400 V

2500 V

rms

©2003 Fairchild Semiconductor Corporation

Rev. D, August 2003