Fairchild Semiconductor FS6S1565RB Datasheet

FS6S1565RB

Fairchild Power Switch(FPS)

www.fairchildsemi.com

Features

• Wide operating frequency range up to 150Khz

• Internal Burst mode Controller for Stand-by mode

• Pulse by pulse over current limiting

• Over current protection(Auto restart mode)

• Over voltage protection (Auto restart mode)

• Over load protection(Auto restart mode)

• Internal thermal shutdown function(Auto restart mode)

• Under voltage lockout

• Internal high voltage sense FET

• Eternal sync terminal/Soft start

Internal Block Diagram

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry . compared to discrete MOSFET and controller or R converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply.

TO-3P-5L

1

switching

CC

Vref

Vpp=5.8/7.2V

Vfb

Vth=1V

Vcc

Vth=11V/12V

5555

4444

Ifb

Vref

Vcc

Idelay

OLP

Vth=7.5V

Vcc

Vth=30V

OVP

Burst mode

controller

2.5R R

UVLO Reset

(Vcc=9V)

OSC

Vref

S

R

11113333

UVLO

Filter

(130nsec)

UVLO Reset

(Vcc=9V)

Ron

Roff

Rsenese

TS

D

(Tj=160℃

Vth=1V

)

2222

Internal

PWM

Vfb Offset

S

Q

R

Bias

S

R

Vref

Q

OCL

Rev.1.0.1

FS6S1565RB

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Parameter Symbol Value Unit

Drain-source(GND) voltage Drain-Gate Voltage (R Gate-source (GND) Voltage V Drain current pulsed Single pulsed avalanche energy Single Pulsed Avalanche current Continuous drain current (Tc = 25°C) I Continuous drain current (TC=100°C) I Supply voltage V

Input Voltage Range

Total Power Dissipation Operating junction temperature T

Operating Ambient Temperature T Storage Temperature range T

(1)

=1MΩ)V

GS

(2)

(3)

(4)

V

DSS

DGR

GS

I

DM

E

AS

I

AS

D D

CC

V

FB

V

S_S

(Watt H/S) 270 W

P

D

Derating 2.17 W/°C

j

A

STG

650 V 650 V ±30 V

60 A

1040 mJ

37 A 15 A

9.5 A 35 V

−0.3 to V

CC

−0.3 to 10 V

+160 °C

−25 to +85 °C

−55 to +150 °C

DC

DC DC

V

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=8.5mH, starting Tj=25°C

4. L=13uH, starting Tj=25°C

2

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-source breakdown voltage BV

Zero gate voltage drain current I

Static drain-source on resistance Forward transconductance

(note)

DSS

R

DS(ON)

gfs V

Input capacitance Ciss

Reverse transfer capacitance Crss - 50 Turn on delay time t

d(on)

Rise time tr - 155 Turn off delay time t

d(off)

Fall time tf - 125 Total gate charge

(gate-source+gate-drain)

Qg

Gate source charge Qgs - 15 Gate drain (Miller) charge Qgd - 45 -

Single Pulsed Avalanche current

Note:

Pulse test : Pulse width ≤ 300µS, duty 2%

1

S

--- -=

R

1. L=13uH, starting Tj=25°C

(1)

I

AS

V

= 0V, ID = 250µA 650 - - V

GS

V

= 650V, V

DS

V

= 520V

DS

V

= 0V, TC = 125°C

GS

V

= 10V, ID = 7.5A - 0.5 0.65

GS

= 50V, ID = 7.5A - - - S

DS

= 0V - - 200 µA

GS

- - 300 µA

- 2580 -

V

GS

= 0V, V

DS

= 25V,

f = 1MHz

V

= 325V, ID = 15A

DD

-50(MOSFET switching time are essentially independent of

- 270 operating temperature) V

= 10V, ID = 15A,

GS

V

= 520V (MOSFET

DS

-90Switching time are

Essentially independent of Operating temperature)

V

= V

CC

FB

= GND - 37 - A

SS

FS6S1565RB

Ω

pFOutput capacitance Coss - 270 -

nS

nC

3

FS6S1565RB

Electrical Characteristics

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

UVLO SECTION

Start threshold voltage V Stop threshold voltage V

START

STOP

SENSEFET SECTION

Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta = 25°C 3500 - - V Drain to Source Breakdown voltage BVdss Vdrain = 650V, Ta = 25°C 650 - - V Drain to Source Leakage current Idss Vdrain = 650V, Ta = 25°C - - 300 uA

OSCILLATOR SECTION

Initial Frequency F Voltage Stability F Temperature Stability (note4) ∆F Maximum duty cycle D Minimum Duty Cycle D

OSC

STABLE

OSC

MAX

MIN

FEEDBACK SECTION

Feedback source current I Shutdown Feedback voltage V

FB

SD

Shutdown delay current Idelay V

PROTECTION SECTION

Over Voltage Protection V Over Current Latch Voltage (Note2) V Thermal Shutdown Temp.(Note4) T

OVP OCL

SD

V

= GND 14 15 16 V

FB

V

= GND 8910V

FB

-222528kHz

12V ≤ Vcc ≤ 23V 0 1 3 %

-25°C ≤ Ta ≤ 85°C0±5±10%

-929598%

---0%

V

= GND 0.7 0.9 1.1 mA

FB

Vfb ≥ 6.9V 6.9 7.5 8.1 V

= 5V 1.6 2.0 2.4 µA

FB

Vsync ≥ 11V 27 30 33 V

-0.91.01.1V

- 140 160 - °C

4