Fairchild Semiconductor FS6S0965RT Datasheet
FS6S-SERIES
FS6S0965RT/FS6S1265RB
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Wide Operating Frequency Range Up to 150Khz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start up Current (max:170uA)
• Low Operating Current (max:15mA)
• Internal High Voltage SenseFET
• Built-in Auto Restart Circuit
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection (Auto Restart Mode)
• Over Current Protection With Latch Mode
• Internal Thermal Protection With Latch Mode
• Pulse By Pulse Over Current Limiting
• Internal Burst Mode Controller for Stand-by Mode
• Under Voltage Lockout With Hystere si s
• External Sync. Terminal
Application
• Monitor SMPS
Internal Block Diagram
Vref
Idelay
Vth=7.5V
Vcc
Vth=30V
Vpp=5.8/7.2V
Vfb
Vth=1V
Vcc
Vth=11V/12V
Vref
UVLO Reset
Burst mode
controller
2.5R
(Vcc=9V)
OSC
R
Ifb
Vcc
OLP
OVP
SoftStart
SoftStart
SoftStart SoftStart
& Sync
& Sync
& Sync& Sync
Feedback
Feedback
FeedbackFeedback
5555
4444
Vref
S
R
Description
The Fairchild Power Switch(FPS) product family are
specially designed for an off line SMPS with minimal
external components. The Fairchild Power Switch(FPS)
consists of a high voltage power SenseFET and a current
mode PWM IC. Included PWM controller features the
integrated fixed oscillator, the under voltage lockout, the
optimized gate turn on/turn off driver, the thermal shut
down protection, the over voltage protection, and the
temperature compensated precision current sources for the
loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a controller or a RCC
switching converter solution, a Fairchild Power Switch(FPS)
can reduce the total component count, design size, and
weight and at the same time increase efficiency,
productivity, and system reliabil ity. It has a basic platform
well suited for the cost effective monitor power supply.
TO-220F-5L
1
1. Drain 2. Gnd 3. V
Internal
Bias
PWM
Vfb Offset
Q
S
R
Vref
UVLO
Q
OCL
Filter
(130nsec)
CC
(Tj=160℃
TO-3P-5L
1
4. FeedBack 5. Sync.
Drain
Drain
Ron
Vth=1V
Rsenese
DrainDrain
11113333
2222
Vcc
Vcc
VccVcc
Roff
TS
D
)
GND
GND
GNDGND
©2002 Fairchild Semiconductor Corporation
Rev.1.0.6
FS6S-SERIES FS6S0965RT/FS6S1265RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic Symbol Value Unit
FS6S0965RT
Maximum Drain Voltage V
Drain-Gate Voltage(R
=1MΩ) V
GS
D,MAX
Gate-Source(GND) Voltage V
Drain Current Pulsed
(1)
I
Continuous Drain Current (Tc = 25°C) I
Continuous Drain Current (Tc = 100°C) I
(2)
Single Pulsed Avalanche Current(Energy
Maximum Supply Voltage V
Input Voltage Range
Total Power Dissipation
)IAS(EAS) 25(950) A(mJ)
CC,MAX
V
V
D
(Watt H/S) 48 W
P
Darting 0.385 W / °C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T
DGR
GS
DM
D
D
FB
SS
J
A
STG
650 V
650 V
±30 V
36 ADC
9ADC
7.2 ADC
35 V
-0.3 to V
CC
-0.3 to 10 V
+160 °C
-25 to +85 °C
-55 to +150 °C
V
FS6S1265RB
Maximum Drain Voltage V
Drain-Gate Voltage(R
=1MΩ) V
GS
Gate-Source(GND) Voltage V
Drain Current Pulsed
(1)
Continuous Drain Current (Tc = 25°C) I
Continuous Drain Current (Tc = 100°C) I
(2)
Single Pulsed Avalanche Current(Energy
)IAS(EAS) 30(950) A(mJ)
Maximum Supply Voltage V
Input Voltage Range
Total Power Dissipation
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T
D,MAX
I
CC,MAX
V
V
D
(Watt H/S) 240 W
P
Darting 1.92 W / °C
DGR
GS
DM
D
D
FB
SS
J
A
STG
650 V
650 V
±30 V
48 ADC
12 ADC
8.4 ADC
35 V
-0.3 to V
CC
V
-0.3 to 10 V
+160 °C
-25 to +85 °C
-55 to +150 °C
2
FS6S-SERIES FS6S0965RT/FS6S1265RB
Electrical Characteristic s (S enseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
FS6S0965RT
Drain Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source On Resistance
Forward Transconductance
(1)
(1)
DSS
DSS
R
DS(on)
gfs V
Input Capacitance Ciss
Output Capacitance Coss - 135 Reverse Transfer Capacitance Crss - 25 Turn On Delay Time t
d(on)
Rise Time tr - 75 Turn Off Delay Time t
d(off)
Fall Time tf - 70 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 8 -
Gate-Drain (Miller) Charge Qgd - 22 -
V
= 0V, ID = 50µA 650 - - V
GS
VDS=Max., Rating, VGS=0V - - 200 µA
= 0.8Max., Rating,
V
DS
V
= 0V, TC = 125°C
GS
V
= 10V, ID = 4.5A - 1.1 1.2 Ω
GS
DS
= 50V, ID = 4.5A - - - S
- - 300 µA
- 1300 -
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
V
DD
= 0.5BV
DSS
, ID = 9.0A
-25(MOSFET switching
time is essentially
independent of
- 130 operating temperature)
GS
= 10V, ID = 9.0A,
V
V
DS
= 0.5BV
DSS
(MOSFET
-45switching time is
essentially independent of
operating temperature)
pF
nS
nC
FS6S1265RB
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(1)
(1)
DSS
DSS
R
DS(on)
gfs V
Input Capacitance Ciss
Output Capacitance Coss - 185 Reverse Transfer Capacitance Crss - 32 Turn On Delay Time t
d(on)
Rise Time tr - 120 Turn Off Delay Time t
d(off)
Fall Time tf - 100 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 10 -
Gate-Drain (Miller) Charge Qgd - 30 -
V
= 0V, ID = 50µA 650 - - V
GS
VDS=Max, Rating, V
= 0.8Max, Rating,
V
DS
V
= 0V, TC = 125°C
GS
V
= 10V, ID = 4.5A - 0.7 0.9 Ω
GS
DS
= 50V, ID = 4.5A - - - S
= 0V - - 200 µA
GS
- - 300 µA
- 1820 -
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
V
DD
= 0.5BV
DSS
, ID = 12.0A
-38(MOSFET switching
time are essentially
independent of
- 200 operating temperature)
V
GS
= 10V, ID = 12.0A,
V
DS
= 0.5BV
DSS
(MOSFET
-60switching time are
essentially independent of
operating temperature)
pF
nS
nC
3
FS6S-SERIES FS6S0965RT/FS6S1265RB
Electrical Characteristics
(Continued)
(VCC=16V, Tamb = 25°C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
Stop Threshold Voltage V
START
STOP
VFB=GND 14 15 16 V
VFB=GND 8 9 10 V
OSCILLATOR SECTION
Initial Frequency F
Voltage Stability F
STABLE
Temperature Stability (Note2) ∆F
Maximum Duty Cycle D
Minimum Duty Cycle D
OSC
OSC
MAX
MIN
12V ≤ V
-25°C ≤ Τa ≤ 85°C0±5 ±10 %
-222528kHz
≤ 23V 0 1 3%
CC
-929598%
---0%
FEEDBACK SECTION
Feedback Source Current I
Shutdown Feedback Voltage V
Shutdown Delay Current I
DELAY
FB
SD
VFB=GND 0.7 0.9 1.1 mA
V
≥ 6.9V 6.9 7.5 8.1 V
FB
VFB=5V 1.6 2.0 2.4
SYNC. & SOFTSTART SECTION
Softstart Voltage V
Softstart Current I
Sync High Threshold Voltage(Note3) V
Sync Low Threshold Voltage(Note3) V
SYNCH
SYNCL
SS
SS
VFB=2V 4.7 5.0 5.3 V
VSS=0V 0.8 1.0 1.2 mA
VCC=16V , VFB=5V - 7.2 - V
VCC=16V , VFB=5V - 5.8 - V
BURST MODE SECTION
Burst Mode Low Threshold Voltage V
Burst Mode High Threshold Voltage V
Burst Mode Enable Feedback Voltage V
Burst Mode Peak Current Limit(Note4) I
Burst Mode Frequency F
BURL
BURH
BEN
BURPK
BUR
VFB=0V 10.4 11.0 11.6 V
VFB=0V 11.4 12.0 12.6 V
VCC=10.5V 0.7 1.0 1.3 V
VCC=10.5V , VFB=0V 0.6 0.85 1.1 A
VCC=10.5V , VFB=0V 40 50 60 kHz
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (Note4) I
OVER
FS6S0965RT 5.28 6.0 6.72
FS6S1265RB 7.04 8.0 8.96
PROTECTION SECTION
V
Over Voltage Protection V
Over Current Latch voltage(Note3) V
Thermal Shutdown Temperature
(Note2)
OVP
OCL
T
SD
≥ 27V 27 30 33 V
CC
-0.91.01.1V
140 160 - °C
TOTAL DEVICE SECTION
V
Start-Up Current I
Operating Supply Current(Note1)
Notes:
1. These parameters are the Current Flowing in the Control IC.
2. These parameters, although guaranteed, are not 100% tested in production
3. These parameters, although guaranteed, are tested in EDS(wafer test) process
4. These parameters are indicated Inductor Current.
START
I
OP
OP(MIN)
I
OP(MAX)
FB
V
FB
V
FB
V
FB
= GND, V
= GND, V
= GND, V
= GND, V
= 14V - 0.1 0.17 mA
CC
= 16V
CC
CC
CC
= 12V
= 30V
-1015mAI
A
µ
A
4
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