Fairchild Semiconductor FS6S0965RCB Datasheet
FS6S0965RCB
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Wide Operating Fre quency Range up to 150kHz
• Lowest Cost SMPS Solution
• Lowest External Components
• Low Start up Current (Max:170uA)
• Low Operating Current (Max:15mA)
• Internal High Voltage SenseFET
• Built-in Auto Restart Circuit
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection (Auto Restart Mode)
• Over Current Protection (Auto Restart Mode)
• Internal Thermal Protection(Auto Restart Mode)
• Pulse By Pulse Over Current Limiting
• Internal Burst Mode Controlle r for Stand-by Mode
• Under Voltage Lockout With Hysteresis
• External Sync. Terminal
Application
• Monitor SMPS
Internal Block Diagram
Description
The Fairchild Power Switch(FPS) product family are
specially designed for an off line SMPS with minimal
external components. The Fairchild Power Switch(FPS)
consists of a high voltage power SenseFET and a current
mode PWM IC. Included PWM controller features the
integrated fixed oscillator, the under voltage lockout, the
optimized gate turn on/turn off driver, the thermal shut
down protection, the over voltage prote ction, and the
temperature compensated precision current sources for the
loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a controller o r a RCC
switching converter solution, a Fairchild Power Switch(FPS)
can reduce the total component count, design size, and
weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for the cost effective monitor power supply.
TO-220-5L
1
1. Drain 2. Gnd 3. VCC 4. Feedback 5. Sync
Vref
Vpp=5.8/7.2V
SoftStart
SoftStart
SoftStart SoftStart
& Sync
& Sync
& Sync& Sync
Feedback
Feedback
FeedbackFeedback
5555
Vth=11V/12V
4444
Idelay
Vth=7.5V
Vcc
Vth=30V
Vfb
Vth=1V
Vref
Vcc
Ifb
Vcc
OLP
OVP
©2003 Fairchild Semiconductor Corporation
Burst mode
controller
2.5R
UVLO Reset
(Vcc=9V)
OSC
R
Drain
Drain
Ron
Rsenese
Vth=1V
DrainDrain
11113333
GND
GND
GNDGND
2222
Vcc
Vcc
VccVcc
UVLO
(130nsec)
Filter
Roff
TSD
(Tj=160 ℃
)
PWM
Vfb Offset
Internal
Bias
S
R
Vref
Q
OCL
Vref
S
Q
R
Rev.1.0.1
FS6S0965RCB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter Symbol Value Unit
Drain-Gate Voltage (R
=1MΩ)V
GS
DGR
Gate-Source (GND) Voltage V
Drain Current Pulsed
(2)
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(3)
(4)
I
E
I
Continuous Drain Current (Tc = 25°C) I
Continuous Drain Current (TC=100°C) I
Supply Voltage V
Input Voltage Range
Total Power Dissipation
V
V
(Watt H/S) 155 W
P
D
Derating 1.243 W/°C
Operating Junction Temperature T
Operating Ambient Temperature T
Storage Temperature Range T
STG
GS
DM
AS
AS
D
D
CC
FB
S_S
j
A
650 V
±30 V
32.4 A
515 mJ
25 A
8.1 A
5.1 A
35 V
-0.3 to V
CC
-0.3 to 10 V
+150 °C
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
V
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=14.5mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
2
FS6S0965RCB
Electrical Characteri sti cs (SenseFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source On Resistance
Forward Transconductance
(1)
(2)
DSS
DSS
R
DS(ON)
gfs VDS=50V, ID=1.8A - - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 25 Turn On Delay Time td(on) V
Rise Time tr - 75 Turn Off Delay Time td(off) - 130 Fall Time tf - 70 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 8 Gate-Drain (Miller) Charge Qgd - 21 -
VGS=0V, ID=250µA 650 - - V
VDS=650V, VGS=0V - - 200 µA
V
=520V
DS
V
=0V, TC=125°C
GS
- - 300 µA
VGS=10V, ID=1.8A - 1.0 1.2
- 1300 -
V
=0V, VDS=25V,
GS
f = 1MHz
=325V, ID=6.5A
DD
-25(MOSFET switching
time is essentially
independent of
operating temperature)
V
=10V, ID=6.5A,
GS
V
=520V (MOSFET
DS
-4560
switching time is essentially
independent of
operating temperature)
Ω
pFOutput Capacitance Coss - 135 -
nS
nC
Notes:
1.Pulse test : Pulse width ≤ 300µS, duty 2%
1
S
--- -=
2.
R
3
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