Fairchild Semiconductor FS6M12653RTC Datasheet
FS6M12653RTC
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Fixed Frequency
• Internal Burst Mode Control ler for Stand-by Mode
• Pulse By Pulse Over Current Limiting
• Over Current Protection(Auto Restart Mode)
• Over Voltage Protection (Auto Restart Mode)
• Over Load Protection(Auto Restart Mode)
• Internal Thermal Shutdown Function(Latch Mode)
• Under Voltage Lockou t
• Internal High Voltage Sense FET
•Soft Start
Internal Block Diagram
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. compared to discrete MOSFET and controller or
R
switching converter solution, a Fairchild Power
CC
Switch(FPS) can reduce total component count, design size,
and weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost effective LCD monitor power supply.
TO-220F-5L
1
1. Drain 2. GND 3. V
4. Feedback 5. SoftStart
CC
Vref
SoftStart
Feedbock
5555
4444
Vth=7.5V
Vcc
Vth=33V
Vth=1V
Vth=11V/12V
Vref
Idelay
Vfb
Vcc
Ifb
Vcc
OLP
OVP
©2003 Fairchild Semiconductor Corporation
Burst mode
controller
2.5R
R
UVLO Reset
(Vcc=9V)
OSC
V
CC
Vfb Offset
Q
PWM
Internal
Bias
Q
S
R
S
R
Vref
Q
OCL
Vref
S
R
UVLO
(130nsec)
Power-on
Reset
(Vcc=6.5V)
Filter
Roff
TSD
(Tj=160℃
)
Ron
Vth=2V
Rsenese
Drain
11113333
GND
2222
Rev.1.0.3
FS6M12653RTC
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic Symbol Value Unit
Drain-Gate Voltage (R
=1MΩ)V
GS
DGR
Gate-Source (GND) Voltage V
Drain Current Pulsed
(1)
I
Continuous Drain Current (Tc = 25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Current
(3)
(Energy
Maximum Supply Voltage V
Input Voltage Range
Total Power Dissipation
(2)
)I
AS(EAS
CC, MAX
V
V
(Watt H/S) 50 W
P
D
Darting 0.4 W/°C
Operating Junction Temperature T
Operating Ambient Temperature T
Storage Temperature Range T
STG
GS
DM
D
D
) 27(960) A(mJ)
FB
SS
j
A
650 V
±30 V
21.2 A
5.3 A
3.4 A
35 V
-0.3 to V
CC
-0.3 to 10 V
+150 °C
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=81mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
2
FS6M12653RTC
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source On Resistance
Forward Transconductance
(1)
(2)
DSSVGS
DSS
R
DS(ON)VGS
gfs VDS=50V, ID=1.8A - - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 32 Turn On Delay Time td(on) V
Rise Time tr - 120 Turn Off Delay Time td(off) - 200 Fall Time tf - 100 Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 10 Gate-Drain (Miller) Charge Qgd - 30 -
=0V, ID=250µA 650 - - V
VDS=650V, VGS=0V - - 200 µA
V
=520V
DS
V
=0V, TC=125°C
GS
- - 300 µA
=10V, ID=1.8A - 0.73 0.9
- 1820 -
V
=0V, VDS=25V,
GS
f = 1MHz
=325V, ID=6.5A
DD
-38(MOSFET switching
time are essentially
independent of
operating temperature)
V
=10V, ID=6.5A,
GS
V
=520V (MOSFET
DS
-60Switching time are
Essentially independent of
Operating temperature)
Ω
pFOutput Capacitance Coss - 185 -
nS
nC
Note:
1. Pulse test : Pulse width ≤ 300µS, duty 2%
1
S
--- -=
2.
R
3
Loading...