Fairchild Semiconductor FQU13N06 Datasheet

May 2001

QFET

TM

FQD13N06 / FQU13N06

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

FQD13N06 / FQU13N06

60V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.

Features

• 10A, 60V, R

DS(on)

= 0.14Ω @VGS = 10 V

• Low gate charge ( typical 5.8 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQD13N06 / FQU13N06 Units

V

DSS

Drain-Source Voltage 60 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

10 A

- Continuous (T

C

= 100°C)

6.3 A

I

DM

Drain Current - Pulsed

(Note 1)

40 A

V

GSS

Gate-Source Voltage ± 25 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

85 mJ

I

AR

Avalanche Current

(Note 1)

10 A

E

AR

Repetitive Avalanche Energy

(Note 1)

2.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

7.0 V/ns

P

D

Power Dissipation (TA = 25°C) *

2.5 W

Power Dissipation (T

C

= 25°C)

28 W

- Derate above 25°C 0.22 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

R

θJC

Thermal Resistance, Junction-to-Case -- 4.5 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

!

"

!

!

!

"

"

"

!

"

!

!

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"

"

"

S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D

FQD13N06 / FQU13N06

Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 990µH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13A, di/dt ≤ 300A/us, VDD ≤ BV

DSS,

Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Tes t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, ID = 250 µA

60 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature
Coefficient

I

D

= 250 µA, Referenced to

25°C

-- 0.06 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 60 V, VGS = 0 V

-- -- 1 µA

V

DS

= 48 V, TC = 125°C

-- -- 10 µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 25 V, VDS = 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -25 V, VDS = 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250 µA

2.0 -- 4.0 V

R

DS(on)

Static Drain-Source On-Resistance

V

GS

= 10 V, ID = 5.0 A

-- 0.11 0.14 Ω

g

FS

Forward Transconductance

V

DS

= 25 V, ID = 5.0 A

-- 4.9 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, VGS = 0 V,

f = 1.0 MHz

-- 240 310 pF

C

oss

Output Capacitance -- 90 120 pF

C

rss

Reverse Transfer Capacitance -- 15 20 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 30 V, ID = 6.5 A,

R

G

= 25 Ω

-- 5 20 ns

t

r

Turn-On Rise Time -- 25 60 ns

t

d(off)

Turn-Off Delay Time -- 8 25 ns

t

f

Turn-Off Fall Time -- 15 40 ns

Q

g

Total Gate Charge

V

DS

= 48 V, ID = 13 A,

V

GS

= 10 V

-- 5.8 7.5 nC

Q

gs

Gate-Source Charge -- 2.0 -- nC

Q

gd

Gate-Drain Charge -- 2.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, IS = 10 A

-- -- 1.5 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, IS = 13 A,

dI

F

/ dt = 100 A/µs

-- 39 -- ns

Q

rr

Reverse Recovery Charge -- 40 -- nC

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

FQD13N06 / FQU13N06

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

0.2 0.4 0.6 0.8 1.0 1.2 1. 4 1.6

10

0

10

1

150

!

"

Notes :

1. V

GS

= 0V

2. 250#s Pulse Test

25

!

I

DR

, Re verse Drain Curre n t [A]

VSD, Source-Drain voltage [V]

010203040

0

100

200

300

400

500

VGS = 20V

VGS = 10V

"

Note : T

J

= 25

!

R

DS(ON)

[m

$

],

Drain-Source On-Resistance

ID, Drain Current [A]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

"

Notes :

1. 250#s Pulse Test

2. T

C

= 25

!

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

01234567

0

2

4

6

8

10

12

VDS = 30V

VDS = 48V

"

Note : I

D

= 13 A

V

GS

, Gate-Source Voltage [V]

QG, Tota l Gate Charge [n C]

10

-1

10

0

10

1

0

100

200

300

400

500

600

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

"

Notes :

1. V

GS

= 0 V

2. f = 1 M Hz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge C haracteristics

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact eristics

246810

10

-1

10

0

10

1

150

!

25

!

-55

!

"

Notes :

1. V

DS

= 25V

2. 250#s Pulse Tes t

I

D

, Dra in Curre nt [A]

VGS, Gate-Source Voltage [V]