Fairchild Semiconductor FQPF6N60 Datasheet

FQPF6N60

600V N-Channel MOSFET

April 2000

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

GSD

Absolute Maximum Ratings

Symbol Parameter FQPF6N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

T

L

Drain-Source Voltage 600 V Drain Current

Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

- Continuous (T

- Derate above 25°C 0.35 W/°C

TO-220F

FQPF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 3.6A, 600V, R

• Low gate charge ( typical 20 nC)

• Low Crss ( typical 10 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

= 1.5Ω @VGS = 10 V

DS(on)

D

!

"

!

"

!

" "

"

!

S

3.6 A

2.3 A

14.4 A

±

440 mJ

3.6 A

4.4 mJ

4.5 V/ns

300 °C

30 V

44 W

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

Thermal Resistance, Junction-to-Case -- 2.84 °CW Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQPF6N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.53 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 1.8 A

V

GS

= 50 V, ID = 1.8 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.2 1.5

-- 4.2 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 95 120 pF Reverse Transfer Capacitance -- 10 13 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 770 1000 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 70 150 ns Turn-Off Delay Time -- 40 90 ns Turn-Off Fall Time -- 45 100 ns Total Gate Charge Gate-Source Charge -- 4.9 -- nC Gate-Drain Charge -- 9.4 -- nC

= 300 V, ID = 6.2 A,

V

DD

Ω

= 25

R

G

V

= 480 V, ID = 6.2 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 20 50 ns

-- 20 25 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 62mH, I

3. ISD  6.2A, di/dt  200A/µs, V

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.6 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 14.4 A

= 0 V, IS = 3.6 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 2.35 --

= 3.6A, VDD = 50V, RG = 25

AS

DD



BV

DSS,

Ω,

Starting TJ = 25°C

V

GS

= 0 V, IS = 6.2 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 290 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

FQPF6N60

V

1

Top : 1 5 V 10 V

8.0 V

7.0 V

6.5 V

6.0 V Botto m : 5.5 V

0

-1

10

GS



Note s :

1. 25 0s Pulse Tes t



2. T

= 25

C

0

10

1

10

, Dra in C u rre n t [A ]

D

I

-1

10

VDS , Dra in-S o u rc e V olta g e [V ]

5

4

],

3



[

DS(ON)

2

R

1

Drain-Source On-Resistance

0

0 2 4 6 8 10121416

VGS = 20V

VGS = 10V



Note : T

ID, Drain Current [A]

1

10



150

0

10

, Dra in C u rre n t [A]

D

I

-1

10

246810



25



-55

VGS , Gate-Source Voltage [V]



Note s :

= 50V

1. V

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10



= 25

J

0

10



25

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

1400

1200

1000

800

600

Capacitance [pF]

400

200

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 120V

VDS = 300V

VDS = 480V



= 6.2 A

Note : I

D

Rev. A, April 2000

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 3 6 9 12 15 18 21

QG, Total Gate Ch a rg e [nC]