Fairchild Semiconductor FQPF4N60 Datasheet

FQPF4N60

FQPF4N60

600V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

GSD

Absolute Maximum Ratings

Symbol Parameter FQFP4N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 600 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.29 W/°C

TO-220F

FQPF Series



TC = 25°C unless otherwise noted

= 25°C)

C

= 100°C)

C

Features

• 2.6A, 600V, R

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 8.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 2.2Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

2.6 A

1.64 A

10.4 A

±

260 mJ

2.6 A

3.6 mJ

4.5 V/ns

300 °C

30 V

36 W

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.47 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQPF4N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.6 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 1.3 A

V

GS

= 50 V, ID = 1.3 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.77 2.2

-- 3.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 70 90 pF
Reverse Transfer Capacitance -- 8 11 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 520 670 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 45 100 ns
Turn-Off Delay Time -- 25 60 ns
Turn-Off Fall Time -- 35 80 ns
Total Gate Charge
Gate-Source Charge -- 3.4 -- nC
Gate-Drain Charge -- 7.1 -- nC

= 300 V, ID = 4.4 A,

V

DD

Ω

= 25

R

G

V

= 480 V, ID = 4.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 13 35 ns

-- 15 20 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 71mH, I

3. ISD  4.4A, di/dt  200A/µs, V

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 10.4 A

= 0 V, IS = 2.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.5 --

= 2.6A, VDD = 50V, RG = 25

AS

DD



BV

DSS,

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

V

GS

= 0 V, IS = 4.4 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 250 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

FQPF4N60

10

10

, Dra in C u rre n t [A ]

D

I

-1

10

1

V
Top : 1 5 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V
Botto m : 5.5 V

0

-1

10

GS



Note s :

1. 25 0s Pulse Tes t



2. T

= 25

C

0

10

1

10

VDS , Dra in-S o u rc e V olta g e [V ]

6

5

4

],



[

3

DS(ON)

R

2

Drain-Source On-Resistance

1

0

024681012

VGS = 20V

VGS = 10V



Note : T

= 25

J

ID, Drain Current [A]

1

10

150

0

10



25

, Dra in C u rre n t [A]

D

I

-1

10

246810

VGS , Gate-Source Voltage [V]





-55



Note s :

= 50V

1. V

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0



10



150

25

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD , Source-Drain Voltage [V]





Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

1000

800

600

400

Capacitance [pF]

200

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

GS

2

V

0

03691215

QG, Total Gate Ch a rg e [nC]

VDS = 120V

VDS = 300V

VDS = 480V



Note : I

= 4.4 A

D

Rev. A, April 2000