Fairchild Semiconductor FMKA140 Datasheet
FMKA140
SCHOTTKY POWER RECTIFIER
General Description:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
Absolute Maximum Ratings* TA = 25
Features:
• Compact surface mount package with J-bend leads (SMA).
• 1.2 Watt Power Dissipation package.
• 1.0 Ampere, forward voltage less than 600 mv
Ordering:
• 13 inch reel (330 mm); 12 mm Tape; 5,000 units per reel.
O
C unless otherwise noted
Parameter Value Units
Storage Temperature -65 to +150
Maximum Junction Temperature -65 to +125 OC
Repetitive Peak Reverse Voltage (V
Average Rectified Forward Current (T
Surge Non Repetitive Forward Current 30 A
(Half wave, single phase, 60 Hz)
) 40 V
RRM
= 120OC) 1.0 A
L
O
C
Junction to Case for Thermal Resistance (R
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SMA Package
(DO-214AC)
Top Mark: A140
Electrical Characteristics TA = 25
1
O
C unless otherwise noted
) 9.6 OC/W
ØJL
2
Actual Size
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
IR Reverse Leakage Current 1.0 mA VR= 40 V; Tj = 25OC
PW 300 us, <2% Duty Cycle 10 mA VR= 40 V; Tj = 100OC
VF Forward Voltage 600 mV IF= 1.0 A; Tj = 25OC
PW 300 us, <2% Duty Cycle
© 1997 Fairchild Semiconductor Corporation
FMKA140
)
)
Forward Voltage
vs. Temperature
5
2
100 C
o
1
0.5
0.1
F
I - FORWARD CURRENT (A)
0.05
0 0.1 0 .2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V - FORWARD VOLTAGE (V
F
o
25 C
130
120
110
100
90
80
70
60
CAPACITANCE (pF)
50
40
30
0 5 10 15 20 25 30 35 40
5
2
1
0.1
0.01
0.001
0 5 10 15 20 25 30 35 40
R
I - REVERSE LEAKAGE CURRENT (mA)
Capacitance
vs. Rever se Bias Vol tage
V - REVER SE BIAS VOLTAG E (V)
R
Reverse Leakage Current
vs. Temp er atur e
o
125 C
o
100 C
o
75 C
o
25 C
V - REVERSE VOLTAGE (V
R
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